Abstract
Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.). One can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. The protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>in an additive-free carbonate electrolyte.
| Original language | English (US) |
|---|---|
| Article number | eaao3170 |
| Journal | Science Advances |
| Volume | 3 |
| Issue number | 11 |
| DOIs | |
| State | Published - Nov 2017 |
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Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode. / Xie, Jin; Liao, Lei; Gong, Yongji; Li, Yanbin; Shi, Feifei; Pei, Allen; Sun, Jie; Zhang, Rufan; Kong, Biao; Subbaraman, Ram; Christensen, Jake; Cui, Yi.
In: Science Advances, Vol. 3, No. 11, eaao3170, 11.2017.Research output: Contribution to journal › Article
TY - JOUR
T1 - Stitching h-BN by atomic layer deposition of LiF as a stable interface for lithium metal anode
AU - Xie, Jin
AU - Liao, Lei
AU - Gong, Yongji
AU - Li, Yanbin
AU - Shi, Feifei
AU - Pei, Allen
AU - Sun, Jie
AU - Zhang, Rufan
AU - Kong, Biao
AU - Subbaraman, Ram
AU - Christensen, Jake
AU - Cui, Yi
PY - 2017/11
Y1 - 2017/11
N2 - Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.). One can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. The protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>in an additive-free carbonate electrolyte.
AB - Defects are important features in two-dimensional (2D) materials that have a strong influence on their chemical and physical properties. Through the enhanced chemical reactivity at defect sites (point defects, line defects, etc.). One can selectively functionalize 2D materials via chemical reactions and thereby tune their physical properties. We demonstrate the selective atomic layer deposition of LiF on defect sites of h-BN prepared by chemical vapor deposition. The LiF deposits primarily on the line and point defects of h-BN, thereby creating seams that hold the h-BN crystallites together. The chemically and mechanically stable hybrid LiF/h-BN film successfully suppresses lithium dendrite formation during both the initial electrochemical deposition onto a copper foil and the subsequent cycling. The protected lithium electrodes exhibit good cycling behavior with more than 300 cycles at relatively high coulombic efficiency (>in an additive-free carbonate electrolyte.
UR - http://www.scopus.com/inward/record.url?scp=85041727399&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041727399&partnerID=8YFLogxK
U2 - 10.1126/sciadv.aao3170
DO - 10.1126/sciadv.aao3170
M3 - Article
C2 - 29202031
AN - SCOPUS:85041727399
VL - 3
JO - Science advances
JF - Science advances
SN - 2375-2548
IS - 11
M1 - eaao3170
ER -