Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

H. B. Huang; J. M. Hu; T. N. Yang; X. Q. Ma; L. Q. Chen

doi:10.1063/1.4896692

Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

H. B. Huang, J. M. Hu, T. N. Yang, X. Q. Ma, L. Q. Chen

Research output: Contribution to journal › Article › peer-review

11 Scopus citations

Abstract

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Original language	English (US)
Article number	122407
Journal	Applied Physics Letters
Volume	105
Issue number	12
DOIs	https://doi.org/10.1063/1.4896692
State	Published - Sep 22 2014

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4896692

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title = "Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity",

abstract = "Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.",

author = "Huang, {H. B.} and Hu, {J. M.} and Yang, {T. N.} and Ma, {X. Q.} and Chen, {L. Q.}",

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doi = "10.1063/1.4896692",

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T1 - Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions

T2 - A micromagnetic study with phase-field microelasticity

AU - Huang, H. B.

AU - Hu, J. M.

AU - Yang, T. N.

AU - Ma, X. Q.

AU - Chen, L. Q.

PY - 2014/9/22

Y1 - 2014/9/22

N2 - Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

AB - Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

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Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

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