Strain-assisted current-induced magnetization reversal in magnetic tunnel junctions: A micromagnetic study with phase-field microelasticity

H. B. Huang, J. M. Hu, T. N. Yang, X. Q. Ma, L. Q. Chen

Research output: Contribution to journalArticle

11 Scopus citations

Abstract

Effect of substrate misfit strain on current-induced in-plane magnetization reversal in CoFeB-MgO based magnetic tunnel junctions is investigated by combining micromagnetic simulations with phase-field microelasticity theory. It is found that the critical current density for in-plane magnetization reversal decreases dramatically with an increasing substrate strain, since the effective elastic field can drag the magnetization to one of the four in-plane diagonal directions. A potential strain-assisted multilevel bit spin transfer magnetization switching device using substrate misfit strain is also proposed.

Original languageEnglish (US)
Article number122407
JournalApplied Physics Letters
Volume105
Issue number12
DOIs
StatePublished - Sep 22 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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