Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films

J. W. Guo, P. S. Wang, Y. Yuan, Q. He, J. L. Lu, T. Z. Chen, S. Z. Yang, Y. J. Wang, R. Erni, M. D. Rossell, V. Gopalan, H. J. Xiang, Y. Tokura, P. Yu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Designing novel multiferroic materials with simultaneous ferroelectric and magnetic orders has been one of the focal points over the last decade due to the promising applications and rich physics involved. In this study, using epitaxial strain (up to 3.8%) as tuning knob, we successfully introduce multiferroicity with prominent high-temperature ferroelectricity into the paraelectric SrMnO3. More interestingly, the experimental temperature-dependent ferroelectric and magnetic studies suggest that the emergent antiferromagnetic order below 100 K greatly enhances the ferroelectric polarization due to the spin-order-induced ionic displacements. We envision that the strain-mediated spin-phonon coupling can be utilized as a pathway to discover functionalities in a wide range of antiferromagnetic insulators with delicate epitaxial manipulations.

Original languageEnglish (US)
Article number235135
JournalPhysical Review B
Volume97
Issue number23
DOIs
StatePublished - Jun 20 2018

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Ferroelectricity
ferroelectricity
Ferroelectric materials
knobs
Thin films
thin films
Knobs
manipulators
tuning
insulators
physics
polarization
Physics
Tuning
Polarization
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Guo, J. W., Wang, P. S., Yuan, Y., He, Q., Lu, J. L., Chen, T. Z., ... Yu, P. (2018). Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films. Physical Review B, 97(23), [235135]. https://doi.org/10.1103/PhysRevB.97.235135
Guo, J. W. ; Wang, P. S. ; Yuan, Y. ; He, Q. ; Lu, J. L. ; Chen, T. Z. ; Yang, S. Z. ; Wang, Y. J. ; Erni, R. ; Rossell, M. D. ; Gopalan, V. ; Xiang, H. J. ; Tokura, Y. ; Yu, P. / Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films. In: Physical Review B. 2018 ; Vol. 97, No. 23.
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author = "Guo, {J. W.} and Wang, {P. S.} and Y. Yuan and Q. He and Lu, {J. L.} and Chen, {T. Z.} and Yang, {S. Z.} and Wang, {Y. J.} and R. Erni and Rossell, {M. D.} and V. Gopalan and Xiang, {H. J.} and Y. Tokura and P. Yu",
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Guo, JW, Wang, PS, Yuan, Y, He, Q, Lu, JL, Chen, TZ, Yang, SZ, Wang, YJ, Erni, R, Rossell, MD, Gopalan, V, Xiang, HJ, Tokura, Y & Yu, P 2018, 'Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films', Physical Review B, vol. 97, no. 23, 235135. https://doi.org/10.1103/PhysRevB.97.235135

Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films. / Guo, J. W.; Wang, P. S.; Yuan, Y.; He, Q.; Lu, J. L.; Chen, T. Z.; Yang, S. Z.; Wang, Y. J.; Erni, R.; Rossell, M. D.; Gopalan, V.; Xiang, H. J.; Tokura, Y.; Yu, P.

In: Physical Review B, Vol. 97, No. 23, 235135, 20.06.2018.

Research output: Contribution to journalArticle

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T1 - Strain-induced ferroelectricity and spin-lattice coupling in SrMn O3 thin films

AU - Guo, J. W.

AU - Wang, P. S.

AU - Yuan, Y.

AU - He, Q.

AU - Lu, J. L.

AU - Chen, T. Z.

AU - Yang, S. Z.

AU - Wang, Y. J.

AU - Erni, R.

AU - Rossell, M. D.

AU - Gopalan, V.

AU - Xiang, H. J.

AU - Tokura, Y.

AU - Yu, P.

PY - 2018/6/20

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AB - Designing novel multiferroic materials with simultaneous ferroelectric and magnetic orders has been one of the focal points over the last decade due to the promising applications and rich physics involved. In this study, using epitaxial strain (up to 3.8%) as tuning knob, we successfully introduce multiferroicity with prominent high-temperature ferroelectricity into the paraelectric SrMnO3. More interestingly, the experimental temperature-dependent ferroelectric and magnetic studies suggest that the emergent antiferromagnetic order below 100 K greatly enhances the ferroelectric polarization due to the spin-order-induced ionic displacements. We envision that the strain-mediated spin-phonon coupling can be utilized as a pathway to discover functionalities in a wide range of antiferromagnetic insulators with delicate epitaxial manipulations.

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