Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

J. L. Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean, T. Vandervelde

Research output: Contribution to journalConference article

Abstract

Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted "hut" structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These "quantum fortress" structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

Original languageEnglish (US)
Pages (from-to)243-246
Number of pages4
JournalDesign and Nature
Volume6
StatePublished - Nov 17 2004
EventDesign and Nature II: Comparing Design in Nature with Science and Engineering - Rhodes, Greece
Duration: Jun 28 2004Jun 30 2004

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Gray, J. L., Hull, R., Singh, N., Elzey, D. M., Floro, J. A., Kumar, P., Pernell, T. L., Bean, J. C., & Vandervelde, T. (2004). Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system. Design and Nature, 6, 243-246.