Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

J. L. Gray; R. Hull; N. Singh; D. M. Elzey; J. A. Floro; P. Kumar; T. L. Pernell; J. C. Bean; T. Vandervelde

doi:10.1201/9781351074636

Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

J. L. Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean, T. Vandervelde

Materials Characterization Lab

Research output: Chapter in Book/Report/Conference proceeding › Chapter

Abstract

Epitaxial growth of Si_0.7Ge_0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted “hut” structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These “quantum fortress” structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

Original language	English (US)
Title of host publication	Microscopy of Semiconducting Materials 2003
Publisher	CRC Press
Pages	243-246
Number of pages	4
ISBN (Electronic)	9781351083089
ISBN (Print)	0750309792, 9781315895536
DOIs	https://doi.org/10.1201/9781351074636
State	Published - Jan 1 2018

All Science Journal Classification (ASJC) codes

Engineering(all)

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Gray, J. L., Hull, R., Singh, N., Elzey, D. M., Floro, J. A., Kumar, P., Pernell, T. L., Bean, J. C., & Vandervelde, T. (2018). Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system. In Microscopy of Semiconducting Materials 2003 (pp. 243-246). CRC Press. https://doi.org/10.1201/9781351074636

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title = "Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system",

abstract = "Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted “hut” structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These “quantum fortress” structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.",

author = "Gray, {J. L.} and R. Hull and N. Singh and Elzey, {D. M.} and Floro, {J. A.} and P. Kumar and Pernell, {T. L.} and Bean, {J. C.} and T. Vandervelde",

year = "2018",

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doi = "10.1201/9781351074636",

language = "English (US)",

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Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system. / Gray, J. L.; Hull, R.; Singh, N.; Elzey, D. M.; Floro, J. A.; Kumar, P.; Pernell, T. L.; Bean, J. C.; Vandervelde, T.

Microscopy of Semiconducting Materials 2003. CRC Press, 2018. p. 243-246.

Research output: Chapter in Book/Report/Conference proceeding › Chapter

TY - CHAP

T1 - Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

AU - Gray, J. L.

AU - Hull, R.

AU - Singh, N.

AU - Elzey, D. M.

AU - Floro, J. A.

AU - Kumar, P.

AU - Pernell, T. L.

AU - Bean, J. C.

AU - Vandervelde, T.

PY - 2018/1/1

Y1 - 2018/1/1

N2 - Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted “hut” structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These “quantum fortress” structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

AB - Epitaxial growth of Si0.7Ge0.3/Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted “hut” structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These “quantum fortress” structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

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SP - 243

EP - 246

BT - Microscopy of Semiconducting Materials 2003

PB - CRC Press

ER -

Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

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