Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system

Jennifer Lynn Gray, R. Hull, N. Singh, D. M. Elzey, J. A. Floro, P. Kumar, T. L. Pernell, J. C. Bean, T. Vandervelde

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Epitaxial growth of Si 0.7 Ge 0.3 /Si(001) under kinetically limited conditions results in the initial formation of shallow pyramidal pits with {501} facets, similar to an inverted “hut” structure. As growth is continued, the pit edges become decorated by islands that elongate to form a continuous wall surrounding each pit. These “quantum fortress” structures reach a maximum stable size. The quantum fortress morphology becomes de-stabilized by further growth causing the introduction of dislocations and also by annealing at temperatures above the growth temperature. The surface morphology has been characterized using both atomic force microscopy and transmission electron microscopy.

Original languageEnglish (US)
Title of host publicationMicroscopy of Semiconducting Materials 2003
PublisherCRC Press
Pages243-246
Number of pages4
ISBN (Electronic)9781351083089
ISBN (Print)0750309792, 9781315895536
DOIs
StatePublished - Jan 1 2018

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Gray, J. L., Hull, R., Singh, N., Elzey, D. M., Floro, J. A., Kumar, P., Pernell, T. L., Bean, J. C., & Vandervelde, T. (2018). Strain-induced formation of self-assembled nanostructures grown under kinetically limited conditions in the SiGe/Si epitaxial system. In Microscopy of Semiconducting Materials 2003 (pp. 243-246). CRC Press. https://doi.org/10.1201/9781351074636