Strain-mediated voltage control of magnetism in multiferroic Ni 77Fe23/Pb(Mg1/3Nb2/3) 0.7Ti0.3O3 heterostructure

Ya Gao, Jiamian Hu, Li Shu, C. W. Nan

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni77Fe23(NiFe, 10 nm)/Pb (Mg1/3Nb 2/3)0.7Ti0.3O3(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni 80Fe20). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.

Original languageEnglish (US)
Article number142908
JournalApplied Physics Letters
Volume104
Issue number14
DOIs
StatePublished - Apr 7 2014

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Strain-mediated voltage control of magnetism in multiferroic Ni <sub>77</sub>Fe<sub>23</sub>/Pb(Mg<sub>1/3</sub>Nb<sub>2/3</sub>) <sub>0.7</sub>Ti<sub>0.3</sub>O<sub>3</sub> heterostructure'. Together they form a unique fingerprint.

  • Cite this