Using voltage-modified anisotropic magnetoresistance (AMR) measurement, we demonstrated a strain-mediated voltage control of magnetism in multiferroic Ni77Fe23(NiFe, 10 nm)/Pb (Mg1/3Nb 2/3)0.7Ti0.3O3(PMN-PT, bulk crystal) heterostructure, even assuming a very small magnetostriction (∼0.3 ppm) for the NiFe film which has a composition close to bulk permalloy (Ni 80Fe20). Influence of the magnitude of the rotating magnetic field used for AMR tests is studied. Combined AMR and theoretical analysis indicate the voltage-modified change in the magnetoresistance of the NiFe film arises from the reduced free energy barrier between the magnetic easy axis and hard axis via voltage-induced strains in the PMN-PT.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)