Stranski-Krastanow growth of germanium on silicon nanowires

Ling Pan, Kok Keong Lew, Joan M. Redwing, Elizabeth C. Dickey

Research output: Contribution to journalArticle

87 Scopus citations

Abstract

There have been extensive studies of germanium (Ge) grown on planar silicon (Si) substrates by the Stranski-Krastanow (S-K) mechanism. In this study, we present S-K growth of Ge on Si nanowires. The Si nanowires were grown at 500 °C by a vapor-liquid-solid (VLS) method, using silane (SiH 4) as the gaseous precursor. By switching the gas source from SiH 4 to germane (GeH 4) during the growth and maintaining the growth conditions, epitaxial Ge islands deposited on the outer surface of the initially formed Si nanowires. Transmission electron microscopy (TEM), scanning TEM, and energy-dispersive X-ray spectroscopy techniques were utilized to identify the thin wetting layer and the three-dimensional Ge islands formed around the Si core nanowires. Cross-sectional TEM verified the surface faceting of the Si core nanowires as well as the Ge islands.

Original languageEnglish (US)
Pages (from-to)1081-1085
Number of pages5
JournalNano letters
Volume5
Issue number6
DOIs
StatePublished - Jun 1 2005

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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