Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

J. M. Redwing, J. D. Acord, I. Manning, S. Raghavan, X. Weng, E. C. Dickey, D. W. Snyder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - Dec 1 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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