Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides

Joan Marie Redwing, J. D. Acord, I. Manning, S. Raghavan, X. Weng, E. C. Dickey, David W. Snyder

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2007 International Semiconductor Device Research Symposium, ISDRS
DOIs
StatePublished - Dec 1 2007
Event2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States
Duration: Dec 12 2007Dec 14 2007

Publication series

Name2007 International Semiconductor Device Research Symposium, ISDRS

Other

Other2007 International Semiconductor Device Research Symposium, ISDRS
CountryUnited States
CityCollege Park, MD
Period12/12/0712/14/07

Fingerprint

Epitaxial growth
Nitrides

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Redwing, J. M., Acord, J. D., Manning, I., Raghavan, S., Weng, X., Dickey, E. C., & Snyder, D. W. (2007). Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. In 2007 International Semiconductor Device Research Symposium, ISDRS [4422504] (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422504
Redwing, Joan Marie ; Acord, J. D. ; Manning, I. ; Raghavan, S. ; Weng, X. ; Dickey, E. C. ; Snyder, David W. / Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. (2007 International Semiconductor Device Research Symposium, ISDRS).
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Redwing, JM, Acord, JD, Manning, I, Raghavan, S, Weng, X, Dickey, EC & Snyder, DW 2007, Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422504, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422504

Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. / Redwing, Joan Marie; Acord, J. D.; Manning, I.; Raghavan, S.; Weng, X.; Dickey, E. C.; Snyder, David W.

2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422504 (2007 International Semiconductor Device Research Symposium, ISDRS).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Redwing JM, Acord JD, Manning I, Raghavan S, Weng X, Dickey EC et al. Stress and morphology evolution during the heteroepitaxial growth of group III-nitrides. In 2007 International Semiconductor Device Research Symposium, ISDRS. 2007. 4422504. (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422504