Stress-induced defects in Sb2Te3

T. Thonhauser, Gun Sang Jeon, G. D. Mahan, Jorge Osvaldo Sofo

Research output: Contribution to journalArticle

73 Scopus citations

Abstract

We present first-principles calculations for stress-induced defects in the thermoelectric material Sb2Te3. We focused on the antisite defect, vacancies, and combinations thereof. Our calculated formation energies are in good agreement with experimentally obtained data. We also studied the effect of hydrostatic pressure and uniaxial stress on these formation energies. Both hydrostatic pressure and uniaxial stress are found to lower the formation energies of the antisite defects, suggesting a structural transition at high pressures. The relation to experiments is also discussed.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume68
Issue number20
DOIs
StatePublished - Nov 18 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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