Stress-induced defects in Sb2Te3

T. Thonhauser, Gun Sang Jeon, G. D. Mahan, Jorge Osvaldo Sofo

Research output: Contribution to journalArticlepeer-review

74 Scopus citations


We present first-principles calculations for stress-induced defects in the thermoelectric material Sb2Te3. We focused on the antisite defect, vacancies, and combinations thereof. Our calculated formation energies are in good agreement with experimentally obtained data. We also studied the effect of hydrostatic pressure and uniaxial stress on these formation energies. Both hydrostatic pressure and uniaxial stress are found to lower the formation energies of the antisite defects, suggesting a structural transition at high pressures. The relation to experiments is also discussed.

Original languageEnglish (US)
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number20
StatePublished - Nov 18 2003

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


Dive into the research topics of 'Stress-induced defects in Sb<sub>2</sub>Te<sub>3</sub>'. Together they form a unique fingerprint.

Cite this