Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

R. M. Chu, Y. D. Zheng, Y. G. Zhou, S. L. Gu, B. Shen, R. Zhang, R. L. Jiang, P. Han, Y. Shi

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Abstract

In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.

Original languageEnglish (US)
Pages (from-to)669-671
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume77
Issue number5
DOIs
Publication statusPublished - Oct 1 2003

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All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

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