Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.