Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

R. M. Chu, Y. D. Zheng, Y. G. Zhou, S. L. Gu, B. Shen, R. Zhang, R. L. Jiang, P. Han, Y. Shi

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.

Original languageEnglish (US)
Pages (from-to)669-671
Number of pages3
JournalApplied Physics A: Materials Science and Processing
Volume77
Issue number5
DOIs
StatePublished - Oct 1 2003

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Quantum confinement
Two dimensional electron gas
Poisson equation
High electron mobility transistors
Carrier concentration
Polarization
aluminum gallium nitride

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

Chu, R. M. ; Zheng, Y. D. ; Zhou, Y. G. ; Gu, S. L. ; Shen, B. ; Zhang, R. ; Jiang, R. L. ; Han, P. ; Shi, Y. / Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors. In: Applied Physics A: Materials Science and Processing. 2003 ; Vol. 77, No. 5. pp. 669-671.
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abstract = "In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schr{\"o}dinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.",
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Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors. / Chu, R. M.; Zheng, Y. D.; Zhou, Y. G.; Gu, S. L.; Shen, B.; Zhang, R.; Jiang, R. L.; Han, P.; Shi, Y.

In: Applied Physics A: Materials Science and Processing, Vol. 77, No. 5, 01.10.2003, p. 669-671.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

AU - Chu, R. M.

AU - Zheng, Y. D.

AU - Zhou, Y. G.

AU - Gu, S. L.

AU - Shen, B.

AU - Zhang, R.

AU - Jiang, R. L.

AU - Han, P.

AU - Shi, Y.

PY - 2003/10/1

Y1 - 2003/10/1

N2 - In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.

AB - In this letter, we investigate the carrier features in AlGaN/InGaN/GaN heterostructure field-effect transistors. A study of charge control in the AlGaN/InGaN/GaN structure is performed by self-consistently solving Schrödinger's equation in conjunction with Poisson's equation. The results indicate that the concentration of two-dimensional electron gas can be largely increased with the incorporation of an InGaN layer. Both carrier density and quantum confinement are very sensitive to the strain in the InGaN channel layer. These novel features are attributed to the strong polarization effect in the AIGaN/InGaN and InGaN/GaN interfaces.

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