Strong quantum confinement and high carrier concentration in AlGaN/InGaN/GaN heterostructure field-effect transistors

R. M. Chu, Y. D. Zheng, Y. G. Zhou, S. L. Gu, B. Shen, R. Zhang, R. L. Jiang, P. Han, Y. Shi

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

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Chemical Compounds

Engineering & Materials Science