TY - JOUR
T1 - Strongly temperature dependent ferroelectric switching in AlN, Al1-xScxN, and Al1-xBxN thin films
AU - Zhu, Wanlin
AU - Hayden, John
AU - He, Fan
AU - Yang, Jung In
AU - Tipsawat, Pannawit
AU - Hossain, Mohammad D.
AU - Maria, Jon Paul
AU - Trolier-McKinstry, Susan
N1 - Funding Information:
The authors gratefully acknowledge funding from DARPA/ ARO (Defense Advanced Research Projects Agency/Army Research Office) through the TUFEN program (Grant Nos. HR0011-20-9-0047 and W911NF-20-2-0274). The XPS analysis was supported by the Office of Naval Research: ONR: N00014-15-1-2863. P.T. was partially funded by Development and Promotion of Science and Technology Talents Project (DPST) Scholarship, Thailand. The authors would also like to thank Professor Geoff Brennecka of the Colorado School of Mines and Professor Vijay Narayanan of Penn State for helpful discussions.
Publisher Copyright:
© 2021 Author(s).
PY - 2021/8/9
Y1 - 2021/8/9
N2 - This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.
AB - This manuscript reports the temperature dependence of ferroelectric switching in Al0.84Sc0.16N, Al0.93B0.07N, and AlN thin films. Polarization reversal is demonstrated in all compositions and is strongly temperature dependent. Between room temperature and 300 °C, the coercive field drops by almost 50% in all samples, while there was very small temperature dependence of the remanent polarization value. Over this same temperature range, the relative permittivity increased between 5% and 10%. Polarization reversal was confirmed by piezoelectric coefficient analysis and chemical etching. Applying intrinsic/homogeneous switching models produces nonphysical fits, while models based on thermal activation suggest that switching is regulated by a distribution of pinning sites or nucleation barriers with an average activation energy near 28 meV.
UR - http://www.scopus.com/inward/record.url?scp=85112682704&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85112682704&partnerID=8YFLogxK
U2 - 10.1063/5.0057869
DO - 10.1063/5.0057869
M3 - Article
AN - SCOPUS:85112682704
SN - 0003-6951
VL - 119
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 6
M1 - 062901
ER -