Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

Tsvetanka Zheleva, Igor Levin, Dan Habersat, Aivars Lelis, Morgen Dautrich, Patrick M. Lenahan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish (US)
Title of host publication2005 International Semiconductor Device Research Symposium
Pages139-140
Number of pages2
StatePublished - Dec 1 2005
Event2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States
Duration: Dec 7 2005Dec 9 2005

Publication series

Name2005 International Semiconductor Device Research Symposium
Volume2005

Other

Other2005 International Semiconductor Device Research Symposium
CountryUnited States
CityBethesda, MD
Period12/7/0512/9/05

Fingerprint

Silicon carbide
Oxides

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Zheleva, T., Levin, I., Habersat, D., Lelis, A., Dautrich, M., & Lenahan, P. M. (2005). Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. In 2005 International Semiconductor Device Research Symposium (pp. 139-140). [1596019] (2005 International Semiconductor Device Research Symposium; Vol. 2005).
Zheleva, Tsvetanka ; Levin, Igor ; Habersat, Dan ; Lelis, Aivars ; Dautrich, Morgen ; Lenahan, Patrick M. / Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. 2005 International Semiconductor Device Research Symposium. 2005. pp. 139-140 (2005 International Semiconductor Device Research Symposium).
@inproceedings{2eb33bb3756440f69289f9a14d2a173b,
title = "Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides",
author = "Tsvetanka Zheleva and Igor Levin and Dan Habersat and Aivars Lelis and Morgen Dautrich and Lenahan, {Patrick M.}",
year = "2005",
month = "12",
day = "1",
language = "English (US)",
isbn = "1424400848",
series = "2005 International Semiconductor Device Research Symposium",
pages = "139--140",
booktitle = "2005 International Semiconductor Device Research Symposium",

}

Zheleva, T, Levin, I, Habersat, D, Lelis, A, Dautrich, M & Lenahan, PM 2005, Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. in 2005 International Semiconductor Device Research Symposium., 1596019, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 139-140, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.

Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. / Zheleva, Tsvetanka; Levin, Igor; Habersat, Dan; Lelis, Aivars; Dautrich, Morgen; Lenahan, Patrick M.

2005 International Semiconductor Device Research Symposium. 2005. p. 139-140 1596019 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides

AU - Zheleva, Tsvetanka

AU - Levin, Igor

AU - Habersat, Dan

AU - Lelis, Aivars

AU - Dautrich, Morgen

AU - Lenahan, Patrick M.

PY - 2005/12/1

Y1 - 2005/12/1

UR - http://www.scopus.com/inward/record.url?scp=33847198281&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847198281&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847198281

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 139

EP - 140

BT - 2005 International Semiconductor Device Research Symposium

ER -

Zheleva T, Levin I, Habersat D, Lelis A, Dautrich M, Lenahan PM. Structural and analytical studies of 4H silicon carbide MOSFETs with thermally grown oxides. In 2005 International Semiconductor Device Research Symposium. 2005. p. 139-140. 1596019. (2005 International Semiconductor Device Research Symposium).