Structural and dielectric properties in (1-x) BaTiO 3-x Bi (Mg 1/2 Ti 1/2) O 3 ceramics (0.1 ≤ x ≤ 0.5) and potential for high-voltage multilayer capacitors

Research output: Contribution to journalArticlepeer-review

64 Scopus citations

Abstract

Structural and dielectric properties of (1-x)BaTiO3-xBi(Mg 1/2Ti1/2)O3 (x = 0.1-0.5) were investigated to understand the binary system and utilize it for high-voltage, high energy density capacitors. The solubility limit for Bi(Mg1/2Ti 1/2)O3 in a BaTiO3 perovskite was between x = 0.4 and x = 0.5. A phase with pseudocubic symmetry was formed for x = 0.1-0.4; a secondary phase developed at x = 0.5. Dielectric measurements showed highly diffusive and dispersive relaxor-like characteristics from 10 to 40 mol% of Bi(Mg1/2Ti1/2)O3. These compositions also showed high relative permittivity with low-temperature coefficients of permittivity over a wide range of temperatures -100°C-600°C. Relaxation behavior was quantitatively investigated using the Vogel-Fulcher model, which revealed the activation energy of 0.17-0.22 eV. Prototyped multilayer capacitors of 18 mm × 17 mm × 4 mm dimensions with a capacitance of 12.5 nF at 1 kHz were successfully constructed and demonstrated multiple charge-discharge characteristics up to 10 kV.

Original languageEnglish (US)
Pages (from-to)2197-2202
Number of pages6
JournalJournal of the American Ceramic Society
Volume96
Issue number7
DOIs
StatePublished - Jul 1 2013

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Structural and dielectric properties in (1-x) BaTiO <sub>3</sub>-x Bi (Mg <sub>1/2</sub> Ti <sub>1/2</sub>) O <sub>3</sub> ceramics (0.1 ≤ x ≤ 0.5) and potential for high-voltage multilayer capacitors'. Together they form a unique fingerprint.

Cite this