Structural and electrical characterization of heteroepitaxial Pb[Yb1/2Nb1/2]O3-PbTiO3 thin films

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Abstract

The pulsed laser deposition process has been used to prepare heteroepitaxial (1-x) Pb[Yb1/2Nb1/2]O3-xPbTiO3(PYbN-PT, x= 0.4,0.5) thin films on single crystalline (001)pcSrppSrRuO3/LaAlO3 and (111)pcSrRuO3/SrTiO3 substrates (the subscript pc refers here to the pseudocubic subcell). High laser frequencies (f- 16 Hz) and 300 mTorr of background O3/O3 in the chamber during deposition provide stoichiometric and high crystalline quality heterostructures. Temperatures in the 560-660 °C range lead to improved microstructures as well as good dielectric and ferroelectric properties consistent with those of PYbN-PT ceramics. In particular, films show room temperature dielectric constants greater than 1300 and exhibit well-developed hysteresis loops with remanent polarizations (Pr) as high as 40-50 μCcm-2. Results are discussed in terms of film composition and crystallinity.

Original languageEnglish (US)
Pages (from-to)3958-3964
Number of pages7
JournalJournal of Applied Physics
Volume87
Issue number8
DOIs
StatePublished - Apr 15 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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