Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom, Yue Ke, Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan Marie Redwing

Research output: Contribution to journalArticle

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Abstract

We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

Original languageEnglish (US)
Article number162110
JournalApplied Physics Letters
Volume100
Issue number16
DOIs
StatePublished - Apr 16 2012

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electrical properties
vapor deposition
thin films
crystal defects
thermal decomposition
partial pressure
Hall effect
sapphire
insulators
evaporation
defects
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Brom, Joseph E. ; Ke, Yue ; Du, Renzhong ; Won, Dongjin ; Weng, Xiaojun ; Andre, Kalissa ; Gagnon, Jarod C. ; Mohney, Suzanne E. ; Li, Qi ; Chen, Ke ; Xi, X. X. ; Redwing, Joan Marie. / Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition. In: Applied Physics Letters. 2012 ; Vol. 100, No. 16.
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abstract = "We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.",
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Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition. / Brom, Joseph E.; Ke, Yue; Du, Renzhong; Won, Dongjin; Weng, Xiaojun; Andre, Kalissa; Gagnon, Jarod C.; Mohney, Suzanne E.; Li, Qi; Chen, Ke; Xi, X. X.; Redwing, Joan Marie.

In: Applied Physics Letters, Vol. 100, No. 16, 162110, 16.04.2012.

Research output: Contribution to journalArticle

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T1 - Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

AU - Brom, Joseph E.

AU - Ke, Yue

AU - Du, Renzhong

AU - Won, Dongjin

AU - Weng, Xiaojun

AU - Andre, Kalissa

AU - Gagnon, Jarod C.

AU - Mohney, Suzanne E.

AU - Li, Qi

AU - Chen, Ke

AU - Xi, X. X.

AU - Redwing, Joan Marie

PY - 2012/4/16

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AB - We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

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