Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition

Joseph E. Brom, Yue Ke, Renzhong Du, Dongjin Won, Xiaojun Weng, Kalissa Andre, Jarod C. Gagnon, Suzanne E. Mohney, Qi Li, Ke Chen, X. X. Xi, Joan M. Redwing

Research output: Contribution to journalArticle

30 Scopus citations

Abstract

We report the epitaxial growth of Bi 2Se 3 thin films on (0001) Al 2O 3 substrates by hybrid physical-chemical vapor deposition (HPCVD). The HPCVD technique combines the thermal decomposition of trimethylbismuth with the thermal evaporation of Se and leads to a high Se partial pressure in the growth ambient. The Bi 2Se 3 films are highly c-axis oriented on sapphire but contain planar defects including stacking faults and twin boundaries. Variable-temperature Hall-effect measurements demonstrate a carrier concentration of 5.8×10 18cm -3 and a mobility of 900 cm 2/Vs at 4.2 K. These results demonstrate the potential of HPCVD for producing high quality Bi 2Se 3 films for topological insulator studies.

Original languageEnglish (US)
Article number162110
JournalApplied Physics Letters
Volume100
Issue number16
DOIs
StatePublished - Apr 16 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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