Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B 2H 6) sources. Boron concentrations ranging from 1 × 10 18 to 4 × 10 19 cm -3 were obtained by varying the inlet dopant/SiH 4 gas ratio. TEM characterization revealed that the B 2H 6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B 2H 6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)