Structural and electrical properties of trimethylboron-doped silicon nanowires

Kok Keong Lew, Ling Pan, Timothy E. Bogart, Sarah M. Dilts, Elizabeth C. Dickey, Joan M. Redwing, Yanfeng Wang, Marco Cabassi, Theresa S. Mayer, Steven W. Novak

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126 Scopus citations

Abstract

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B 2H 6) sources. Boron concentrations ranging from 1 × 10 18 to 4 × 10 19 cm -3 were obtained by varying the inlet dopant/SiH 4 gas ratio. TEM characterization revealed that the B 2H 6-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. The difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B 2H 6. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.

Original languageEnglish (US)
Pages (from-to)3101-3103
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
StatePublished - Oct 11 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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