Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

S. Krishna, D. Zhu, J. Xu, K. K. Linder, O. Qasaimeh, P. Bhattacharya, D. L. Huffaker

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Abstract

Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5-6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena.

Original languageEnglish (US)
Pages (from-to)6135-6138
Number of pages4
JournalJournal of Applied Physics
Volume86
Issue number11
DOIs
Publication statusPublished - Dec 1999

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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