Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide

H. Assaf, E. Ntsoenzok, M. F. Barthe, M. O. Ruault, T. Sauvage, S Ashok

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Thermally grown silicon oxide layer was implanted at room temperature with 300 keV Xe at fluences ranging from 0.5 to 5 × 1016 Xe/cm2. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with VnXem complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as (Si-O-, Si-O-O- and O2-) are also created after implantation.

Original languageEnglish (US)
Pages (from-to)222-226
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume253
Issue number1-2
DOIs
StatePublished - Dec 1 2006

Fingerprint

Silicon oxides
Inert gases
silicon oxides
rare gases
implantation
bubbles
Defects
Vacancies
defects
fluence
Positron annihilation spectroscopy
Transmission electron microscopy
transmission electron microscopy
Rutherford backscattering spectroscopy
positron annihilation
Spectrometry
spectroscopy
integrated circuits
Integrated circuits
backscattering

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

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title = "Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide",
abstract = "Thermally grown silicon oxide layer was implanted at room temperature with 300 keV Xe at fluences ranging from 0.5 to 5 × 1016 Xe/cm2. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with VnXem complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as (Si-O-, Si-O-O- and O2-) are also created after implantation.",
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Structural and nuclear characterizations of defects created by noble gas implantation in silicon oxide. / Assaf, H.; Ntsoenzok, E.; Barthe, M. F.; Ruault, M. O.; Sauvage, T.; Ashok, S.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 253, No. 1-2, 01.12.2006, p. 222-226.

Research output: Contribution to journalArticle

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AU - Assaf, H.

AU - Ntsoenzok, E.

AU - Barthe, M. F.

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AU - Sauvage, T.

AU - Ashok, S

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AB - Thermally grown silicon oxide layer was implanted at room temperature with 300 keV Xe at fluences ranging from 0.5 to 5 × 1016 Xe/cm2. Bubbles created after Xe-implantation provided a low-k silicon oxide that has potential use as a dielectric material for interconnects in Si integrated circuits. Transmission Electron Microscopy (TEM), Rutherford Backscattering Spectrometry (RBS) and Positron Annihilation Spectroscopy (PAS) were used to provide a comprehensive characterization of defects (bubbles, vacancy, gas atoms and other types of defects) created by Xe implantation in SiO2 layer. These measurements suggest that the bubbles observed with TEM for all fluences were a consequence of the interaction between Xe and vacancies (V), with VnXem complexes created in the zone where V and Xe profiles overlap. Negatively charged defects such as (Si-O-, Si-O-O- and O2-) are also created after implantation.

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