Structural characterization of molecular-beam epitaxially grown Zn 1-x MnxSe on GaAs(001) substrates

S. B. Qadri, N. Samarth, J. K. Furdyna

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


Epitaxially grown single-crystal films of Zn1-xMnxSe have been characterized by x-ray diffraction techniques. Their dislocation densities have been estimated from double-crystal rocking-curve measurements. Values of the unit cell parameters normal and parallel to the substrate surface, as determined from (004) and (444) reflections, indicate that the films have some degree of tetragonal distortion for higher Mn compositions.

Original languageEnglish (US)
Pages (from-to)3622-3625
Number of pages4
JournalJournal of Applied Physics
Issue number8
StatePublished - 1989

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)


Dive into the research topics of 'Structural characterization of molecular-beam epitaxially grown Zn <sub>1-x</sub> Mn<sub>x</sub>Se on GaAs(001) substrates'. Together they form a unique fingerprint.

Cite this