Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy

S. Akhter, H. Lee, H. G. Hong, Thomas E. Mallouk, J. M. White

Research output: Contribution to journalArticle

55 Citations (Scopus)

Abstract

A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.

Original languageEnglish (US)
Pages (from-to)1608-1613
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume7
Issue number3
DOIs
StatePublished - Jan 1 1989

Fingerprint

Organophosphonates
Takeoff
Silicon
Photoelectron spectroscopy
metal films
x ray spectroscopy
Metal ions
Multilayers
Metals
photoelectron spectroscopy
X rays
takeoff
Electrons
silicon
mean free path
metal ions
wafers
metals
electrons

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

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abstract = "A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.",
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Structural characterization of multilayer metal phosphonate film on silicon using angular-dependent x-ray photoelectron spectroscopy. / Akhter, S.; Lee, H.; Hong, H. G.; Mallouk, Thomas E.; White, J. M.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 7, No. 3, 01.01.1989, p. 1608-1613.

Research output: Contribution to journalArticle

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AU - Akhter, S.

AU - Lee, H.

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AU - White, J. M.

PY - 1989/1/1

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AB - A trilayered film of (Hf, Y, Zr) 1,10-decanebisphosphonate was grown on Si wafer and characterized by variable angle take off x-ray photoelectron spectroscopy. The angular dependence of the metal intensities is consistent with a sequentially layered arrangement with no intermixing of the metal ions. This implies that the C10 alkyl chains are fully extended and stacked in an ordered layered structure. The angular dependence of the Si 2p electrons (1150 eV) yields a mean free path of 315 + 80 A.

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