Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

R. E. Mikawa, Patrick M. Lenahan

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

Original languageEnglish (US)
Pages (from-to)550-552
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number6
DOIs
StatePublished - Dec 1 1985

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semiconductor devices
metal oxide semiconductors
injection
damage
electrons
defects
silicon
electron paramagnetic resonance
oxides

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.",
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Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices. / Mikawa, R. E.; Lenahan, Patrick M.

In: Applied Physics Letters, Vol. 46, No. 6, 01.12.1985, p. 550-552.

Research output: Contribution to journalArticle

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