Structural damage at the Si/SiO2 interface resulting from electron injection in metal-oxide-semiconductor devices

R. E. Mikawa, P. M. Lenahan

Research output: Contribution to journalArticlepeer-review

16 Scopus citations

Abstract

With electron spin resonance, we have observed structural changes in metal-oxide-semiconductor structures resulting from the photoemisson of electrons from the silicon into the oxide. A trivalent silicon defect at the Si/SiO2 interface, termed Pb, is shown to be responsible for the interface states induced by electron injection. We find that these Pb centers are amphoteric interface state defects.

Original languageEnglish (US)
Pages (from-to)550-552
Number of pages3
JournalApplied Physics Letters
Volume46
Issue number6
DOIs
StatePublished - Dec 1 1985

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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