Structural defects and microindentation analysis of zone melted Bi 2Te 3-xSe x whiskers

Bhakti Jariwala, Dimple V. Shah

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The dislocation density and microhardness of Bi 2Te 3-xSe x (x=0-0.3 at% Se) grown by the zone melting method have been investigated. We also have got the whiskers of Bi 2Te 3-xSe x at the end of ampoule during the growth process. SEM was characterized for surface analysis of the grown whisker. The length of the grown whiskers was around 10 mm in the direction of the crystallographic c-axis. Concentric pairs of dislocation triangle were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by the chemical etching technique. Dislocation etching was achieved on all crystal planes examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the (001) faces of Bi 2Te 3-xSe x.

Original languageEnglish (US)
Pages (from-to)143-146
Number of pages4
JournalJournal of Crystal Growth
Volume352
Issue number1
DOIs
StatePublished - Aug 1 2012

Fingerprint

Nitric Acid
Citric acid
Nitric acid
Dislocations (crystals)
Citric Acid
microhardness
Etching
Zone melting
Defects
Crystals
defects
Surface analysis
Prisms
Microhardness
Quenching
etchants
citric acid
Doping (additives)
nitric acid
Annealing

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Jariwala, Bhakti ; Shah, Dimple V. / Structural defects and microindentation analysis of zone melted Bi 2Te 3-xSe x whiskers. In: Journal of Crystal Growth. 2012 ; Vol. 352, No. 1. pp. 143-146.
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Structural defects and microindentation analysis of zone melted Bi 2Te 3-xSe x whiskers. / Jariwala, Bhakti; Shah, Dimple V.

In: Journal of Crystal Growth, Vol. 352, No. 1, 01.08.2012, p. 143-146.

Research output: Contribution to journalArticle

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AU - Shah, Dimple V.

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N2 - The dislocation density and microhardness of Bi 2Te 3-xSe x (x=0-0.3 at% Se) grown by the zone melting method have been investigated. We also have got the whiskers of Bi 2Te 3-xSe x at the end of ampoule during the growth process. SEM was characterized for surface analysis of the grown whisker. The length of the grown whiskers was around 10 mm in the direction of the crystallographic c-axis. Concentric pairs of dislocation triangle were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by the chemical etching technique. Dislocation etching was achieved on all crystal planes examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the (001) faces of Bi 2Te 3-xSe x.

AB - The dislocation density and microhardness of Bi 2Te 3-xSe x (x=0-0.3 at% Se) grown by the zone melting method have been investigated. We also have got the whiskers of Bi 2Te 3-xSe x at the end of ampoule during the growth process. SEM was characterized for surface analysis of the grown whisker. The length of the grown whiskers was around 10 mm in the direction of the crystallographic c-axis. Concentric pairs of dislocation triangle were observed on the as-grown surfaces of short hexagonal prisms. A systematic study of dislocations in these crystals was carried out by the chemical etching technique. Dislocation etching was achieved on all crystal planes examined using a saturated solution of citric acid and nitric acid as the etchant. The dislocation etchant has been found to give reproducible etch-pits on the cleavage surface. The use of citric acid and nitric acid proved to be especially advantageous for the basal plane, producing etched pits suitable for dislocation etch pit counting. The effects of Se doping, annealing and quenching on the mechanical properties have also been studied on the (001) faces of Bi 2Te 3-xSe x.

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