Structural origins of electrical asymmetries of ZnO vertical thin film transistors

Kaige G. Sun, Shelby F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

Original languageEnglish (US)
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-198
Number of pages2
Volume2015-August
ISBN (Electronic)9781467381345
DOIs
StatePublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015Jun 24 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period6/21/156/24/15

Fingerprint

Thin film transistors
Atomic layer deposition
Photolithography
Current voltage characteristics
Transistors
Current density
Physics
Simulators
Electrodes

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Sun, K. G., Nelson, S. F., & Jackson, T. N. (2015). Structural origins of electrical asymmetries of ZnO vertical thin film transistors. In 73rd Annual Device Research Conference, DRC 2015 (Vol. 2015-August, pp. 197-198). [7175631] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2015.7175631
Sun, Kaige G. ; Nelson, Shelby F. ; Jackson, Thomas Nelson. / Structural origins of electrical asymmetries of ZnO vertical thin film transistors. 73rd Annual Device Research Conference, DRC 2015. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. pp. 197-198
@inproceedings{f0ad1b0d3f44413280100c9541a194c3,
title = "Structural origins of electrical asymmetries of ZnO vertical thin film transistors",
abstract = "Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.",
author = "Sun, {Kaige G.} and Nelson, {Shelby F.} and Jackson, {Thomas Nelson}",
year = "2015",
month = "8",
day = "3",
doi = "10.1109/DRC.2015.7175631",
language = "English (US)",
volume = "2015-August",
pages = "197--198",
booktitle = "73rd Annual Device Research Conference, DRC 2015",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

Sun, KG, Nelson, SF & Jackson, TN 2015, Structural origins of electrical asymmetries of ZnO vertical thin film transistors. in 73rd Annual Device Research Conference, DRC 2015. vol. 2015-August, 7175631, Institute of Electrical and Electronics Engineers Inc., pp. 197-198, 73rd Annual Device Research Conference, DRC 2015, Columbus, United States, 6/21/15. https://doi.org/10.1109/DRC.2015.7175631

Structural origins of electrical asymmetries of ZnO vertical thin film transistors. / Sun, Kaige G.; Nelson, Shelby F.; Jackson, Thomas Nelson.

73rd Annual Device Research Conference, DRC 2015. Vol. 2015-August Institute of Electrical and Electronics Engineers Inc., 2015. p. 197-198 7175631.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - Structural origins of electrical asymmetries of ZnO vertical thin film transistors

AU - Sun, Kaige G.

AU - Nelson, Shelby F.

AU - Jackson, Thomas Nelson

PY - 2015/8/3

Y1 - 2015/8/3

N2 - Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

AB - Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

UR - http://www.scopus.com/inward/record.url?scp=84957655847&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84957655847&partnerID=8YFLogxK

U2 - 10.1109/DRC.2015.7175631

DO - 10.1109/DRC.2015.7175631

M3 - Conference contribution

AN - SCOPUS:84957655847

VL - 2015-August

SP - 197

EP - 198

BT - 73rd Annual Device Research Conference, DRC 2015

PB - Institute of Electrical and Electronics Engineers Inc.

ER -

Sun KG, Nelson SF, Jackson TN. Structural origins of electrical asymmetries of ZnO vertical thin film transistors. In 73rd Annual Device Research Conference, DRC 2015. Vol. 2015-August. Institute of Electrical and Electronics Engineers Inc. 2015. p. 197-198. 7175631 https://doi.org/10.1109/DRC.2015.7175631