Structural origins of electrical asymmetries of ZnO vertical thin film transistors

Kaige G. Sun, Shelby F. Nelson, Thomas Nelson Jackson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Vertical thin film transistors (VTFTs) achieve sub-micron channel length without expensive high-resolution photolithography by taking advantage of a three-dimensional device structure. Recently, ZnO VTFTs with active layers deposited by spatial atomic layer deposition (SALD) were demonstrated with large current density (10 mA/mm), high mobility (>14 cm2/Vs) and large on-off ratio (>107) [1]. Asymmetric saturation-region current-voltage characteristics were also obtained when the transistor source and drain electrodes were interchanged. Using the Synopsys Sentaurus drift-diffusion simulator we developed a physics-based two-dimensional model for SALD ZnO VTFTs. Using the model, we are able to reproduce the electrical behavior of the ZnO VTFTs and understand the role of nanometer-scale features in the device structure.

Original languageEnglish (US)
Title of host publication73rd Annual Device Research Conference, DRC 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages197-198
Number of pages2
Volume2015-August
ISBN (Electronic)9781467381345
DOIs
StatePublished - Aug 3 2015
Event73rd Annual Device Research Conference, DRC 2015 - Columbus, United States
Duration: Jun 21 2015Jun 24 2015

Other

Other73rd Annual Device Research Conference, DRC 2015
CountryUnited States
CityColumbus
Period6/21/156/24/15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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