Structure and bonding in nitrided oxide films by sims and XPS

S. W. Novak, J. R. Shallenberger, D. A. Cole, J. W. Marino

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The N distribution and bonding in five types of oxynitride films have been investigated using SIMS and XPS. Films were grown using N2O, NO-O2 and NH3 gas sources, a remote plasma N source and a Helicon plasma source. The SIMS measurements show different N distributions for each type of sample. XPS measurements show only N≡Si3 bonding in the gas source films, N≡Si3 and O-N-Si2 bonding in the remote plasma sample, and N≡Si3, O-N=Si2 and O2=N-Si bonding in the Helicon plasma sample. Angle-resolved XPS measurements show that the O2=N-Si bonding is deepest in the sample whereas the O-N=Si2 bonding is associated with a surface oxide.

Original languageEnglish (US)
Pages (from-to)579-586
Number of pages8
JournalMaterials Research Society Symposium - Proceedings
Volume567
DOIs
StatePublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on Ultrathin SiO2 and High-k Materials for ULSI Gate Dielectrics - San Francisco, CA, USA
Duration: Apr 5 1999Apr 8 1999

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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