Structure and piezoelectric properties of sol-gel-derived 0.5 Pb[Yb 1/2Nb1/2]O3-0.5 PbTiO3 thin films

Q. Q. Zhang, Q. F. Zhou, Susan E. Trolier-McKinstry

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Abstract

0.5 Pb[Yb1/2Nb1/2]O3-0.5 PbTiO3 thin films were deposited on (111) Pt/Ti/SiO2/Si substrates by sol-gel processing using a thin Pb(Zr0.52Ti0.48)O 3 seed layer. X-ray diffraction analysis and scanning electron microscopy revealed that the films were strongly (111) oriented, mimicking the orientation of the (111) Pt/Ti/SiO2/Si substrate. No pyrochlore phase was observed by x-ray diffraction and the films had a uniform grain size of about 50-60 nm. The dielectric permittivity and loss factor varied only slightly with frequency in the range of 100-10000 Hz. At 1 kHz, the dielectric permittivity was 1025 and dielectric loss was 0.028. The films exhibited good ferroelectric and piezoelectric properties. The remanent polarization (P r) was 30 μC/cm2. The effective transverse piezoelectric e31,f coefficient (-4.8 C/m2) of the films was measured using a modified wafer flexure method.

Original languageEnglish (US)
Pages (from-to)3370-3372
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number18
DOIs
StatePublished - May 6 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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