Structure and transport properties of Cr doped La214 system

Gaojie Xu, Zhiqiang Mao, Hao Jin, Yunbo Jia, Hongjie Yan, Jianwu Zhang, Yuheng Zhang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

Original languageEnglish (US)
Pages (from-to)263-268
Number of pages6
JournalPhysica C: Superconductivity and its applications
Volume314
Issue number3
DOIs
StatePublished - Mar 20 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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