Structure and transport properties of Cr doped La214 system

Gaojie Xu; Zhiqiang Mao; Hao Jin; Yunbo Jia; Hongjie Yan; Jianwu Zhang; Yuheng Zhang

doi:10.1016/S0921-4534(99)00176-8

Structure and transport properties of Cr doped La214 system

Gaojie Xu, Zhiqiang Mao, Hao Jin, Yunbo Jia, Hongjie Yan, Jianwu Zhang, Yuheng Zhang

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The structure and normal state transport properties of La_1.85-xSr_0.15-xCu_1-xCr_xO₄ (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

Original language	English (US)
Pages (from-to)	263-268
Number of pages	6
Journal	Physica C: Superconductivity and its applications
Volume	314
Issue number	3
DOIs	https://doi.org/10.1016/S0921-4534(99)00176-8
State	Published - Mar 20 1999

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Energy Engineering and Power Technology
Electrical and Electronic Engineering

Access to Document

10.1016/S0921-4534(99)00176-8

Fingerprint Dive into the research topics of 'Structure and transport properties of Cr doped La214 system'. Together they form a unique fingerprint.

Cite this

@article{dfb87fc78e68463f9f6fe121068b790d,

title = "Structure and transport properties of Cr doped La214 system",

abstract = "The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.",

author = "Gaojie Xu and Zhiqiang Mao and Hao Jin and Yunbo Jia and Hongjie Yan and Jianwu Zhang and Yuheng Zhang",

year = "1999",

month = mar,

day = "20",

doi = "10.1016/S0921-4534(99)00176-8",

language = "English (US)",

volume = "314",

pages = "263--268",

journal = "Physica C: Superconductivity and its Applications",

issn = "0921-4534",

publisher = "Elsevier",

number = "3",

}

TY - JOUR

T1 - Structure and transport properties of Cr doped La214 system

AU - Xu, Gaojie

AU - Mao, Zhiqiang

AU - Jin, Hao

AU - Jia, Yunbo

AU - Yan, Hongjie

AU - Zhang, Jianwu

AU - Zhang, Yuheng

PY - 1999/3/20

Y1 - 1999/3/20

N2 - The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

AB - The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.

UR - http://www.scopus.com/inward/record.url?scp=0032654570&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032654570&partnerID=8YFLogxK

U2 - 10.1016/S0921-4534(99)00176-8

DO - 10.1016/S0921-4534(99)00176-8

M3 - Article

AN - SCOPUS:0032654570

VL - 314

SP - 263

EP - 268

JO - Physica C: Superconductivity and its Applications

JF - Physica C: Superconductivity and its Applications

SN - 0921-4534

IS - 3

ER -

Structure and transport properties of Cr doped La214 system

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this