The structure and normal state transport properties of La1.85-xSr0.15-xCu1-xCrxO4 (0≤x≤0.30) have been investigated by means of XRD, resistivity and thermoelectric power. The analysis of experimental results indicates that Cr doping introduces disorder into the system, which causes an obvious metal-insulator (MI) transition in the samples with high doping level. This MI transition can be well interpreted in the context of the Anderson theory of disorder-induced localization. In addition, Cr doping leads to the broad peaks in the S-T curves shifting up to high temperature, which is in contrast to that of the non-magnetic element, Al, doped system. This discrepancy is analyzed in terms of the changes of d-p hybridization and spin correlation.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering