We have fabricated metal (M) doped PrBa2Cu3O7 (PBCO), i.e., PrBa2(Cu1-xMx)3O7 for M = Al, Co, Fe, Ga, Ni and Zn, and x = 0.05, 0.10, 0.15, and 0.20. X-ray data indicated no significant second phase for substituting Cu by Al, Co, Fe and Ga up to 20%. However impurity phases were detected for Ni and Zn substituted samples with doping levels equal to and higher than 15%. At 77 K the electrical resistivity of these compounds is orders in magnitude higher than that of PBCO. We also found that although the lattice parameters in the doped samples differ from the undoped one, all samples remain orthorhombic. The lattice parameters of the doped sample are very close to those of YBa2Cu3O7-δ (YBCO) and PBCO. For this reason these compounds are better materials to be used as the I-layer for YBCO SIS junctions [T.-P. Chen, U. Tipparach, X. Yang, A. Zhou, B. Chen, Q.Y. Chen, W.K. Chu, C.J.C. Chen, J.T. Wang. Intern. Mod. Phys. B 9 (2005) 123]. Results from transport studies on 2000 Å thick PrBa2[Cu0.80Al0.2]3O7 (PBCAO) and YBCO/PBCAO multilayers are presented in this paper.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering