Structure of 6H silicon carbide/silicon dioxide interface trapping defects

David J. Meyer, Nathaniel A. Bohna, Patrick M. Lenahan, Aivars J. Lelis

Research output: Contribution to journalArticle

21 Scopus citations

Abstract

The deep level trap defects at the interface of 6H silicon carbide and the SiO 2 gate dielectric in SiC metal-oxide-semiconductor field effect transistors were discussed. The trapping defects on the interface were observed using spin-dependent recombination (SDR) technique. The SiC/SiO 2interface recombination currents were found to be correlated with the SDR response. The correlation between the recombination current peak and SDR peak showed that the SDR defect was a dominating deep-level trap at the SiC/SiO 2 interface.

Original languageEnglish (US)
Pages (from-to)3406-3408
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number17
DOIs
StatePublished - Apr 26 2004

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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