Structure study of bulk nanograined thermoelectric bismuth antimony telluride

Yucheng Lan, Bed Poudel, Yi Ma, Dezhi Wang, Mildred S. Dresselhaus, Gang Chen, Zhifeng Ren

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Abstract

The microstructures of bulk nanograined p-type bismuth antimony telluride with a thermoelectric dimensionless figure-of-merit ZT = 1.4 are investigated using transmission electron microscopy. It is found that the bulk material contains both nano- and microsized grains. Between the nanograms, bismuth-rich interface regions with a 4 nm thickness were detected. In addition, nanoprecipitates as well as other defects are also found to be embedded in the nanograms. The high ZT is attributed to the slight increase in the electrical conductivity, and to the large decrease of the thermal conductivity.

Original languageEnglish (US)
Pages (from-to)1419-1422
Number of pages4
JournalNano letters
Volume9
Issue number4
DOIs
Publication statusPublished - Apr 8 2009

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All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Lan, Y., Poudel, B., Ma, Y., Wang, D., Dresselhaus, M. S., Chen, G., & Ren, Z. (2009). Structure study of bulk nanograined thermoelectric bismuth antimony telluride. Nano letters, 9(4), 1419-1422. https://doi.org/10.1021/nl803235n