@inproceedings{b86f4642d53c48d0950bc2fe9fcc6aa4,
title = "Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs",
abstract = "Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped charge density is found to be unaffected. The fast measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, Vth shift is observed to decrease with increasing temperature for the same stress level suggesting that Vth recovery is temperature activated.",
author = "Amartya Ghosh and Jifa Hao and Michael Cook and Chris Kendrick and Suliman, {Samia A.} and Hall, {Gavin D.R.} and Tom Kopley and Awadelkarim, {Osama O.}",
year = "2020",
month = apr,
doi = "10.1109/IRPS45951.2020.9128318",
language = "English (US)",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",
address = "United States",
note = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",
}