Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs

Amartya Ghosh, Jifa Hao, Michael Cook, Chris Kendrick, Samia A. Suliman, Gavin D.R. Hall, Tom Kopley, Osama O. Awadelkarim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Bias Temperature Instability (BTI) measurements were performed on SiC n-channel DMOSFETs. The effects of the BTI stress on the electrical characteristics of the device were studied using slow and fast measurements. The slow Measurements show that the change in threshold voltage (Vth) can be attributed to charge carrier trapping/de-trapping at border traps, while interface trapped charge density is found to be unaffected. The fast measurements, however, shows significant Vth recovery taking place in-situ during measurement. Moreover, Vth shift is observed to decrease with increasing temperature for the same stress level suggesting that Vth recovery is temperature activated.

Original languageEnglish (US)
Title of host publication2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781728131993
DOIs
StatePublished - Apr 2020
Event2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, United States
Duration: Apr 28 2020May 30 2020

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2020-April
ISSN (Print)1541-7026

Conference

Conference2020 IEEE International Reliability Physics Symposium, IRPS 2020
CountryUnited States
CityVirtual, Online
Period4/28/205/30/20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Studies of Bias Temperature Instabilities in 4H-SiC DMOSFETs'. Together they form a unique fingerprint.

Cite this