The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.
All Science Journal Classification (ASJC) codes
- Surfaces, Coatings and Films
- Condensed Matter Physics
- Surfaces and Interfaces