Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

K. Chang, K. Shanmugasundaram, Jeffrey Shallenberger, Jerzy Ruzyllo

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

Original languageEnglish (US)
Pages (from-to)3802-3805
Number of pages4
JournalThin Solid Films
Volume515
Issue number7-8
DOIs
StatePublished - Feb 26 2007

Fingerprint

metal oxide semiconductors
Hafnium
Metals
Fog
Deposition rates
Leakage currents
Oxides
X ray diffraction analysis
Rate constants
Materials properties
Permittivity
X ray photoelectron spectroscopy
mist
hafnium
low currents
leakage
x rays
photoelectron spectroscopy
permittivity
oxides

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Condensed Matter Physics
  • Surfaces and Interfaces

Cite this

Chang, K. ; Shanmugasundaram, K. ; Shallenberger, Jeffrey ; Ruzyllo, Jerzy. / Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications. In: Thin Solid Films. 2007 ; Vol. 515, No. 7-8. pp. 3802-3805.
@article{c2a770a8e8f346bf98c1098768f08fcb,
title = "Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications",
abstract = "The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.",
author = "K. Chang and K. Shanmugasundaram and Jeffrey Shallenberger and Jerzy Ruzyllo",
year = "2007",
month = "2",
day = "26",
doi = "10.1016/j.tsf.2006.09.048",
language = "English (US)",
volume = "515",
pages = "3802--3805",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",
number = "7-8",

}

Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications. / Chang, K.; Shanmugasundaram, K.; Shallenberger, Jeffrey; Ruzyllo, Jerzy.

In: Thin Solid Films, Vol. 515, No. 7-8, 26.02.2007, p. 3802-3805.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications

AU - Chang, K.

AU - Shanmugasundaram, K.

AU - Shallenberger, Jeffrey

AU - Ruzyllo, Jerzy

PY - 2007/2/26

Y1 - 2007/2/26

N2 - The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

AB - The effect of hafnium content on material properties of ultra-thin, mist deposited Hf-based dielectrics is investigated. Deposition rate and dielectric constant of HfSiOx film were found to increase with Hf content in the precursor. X-ray photoelectron spectroscopy and X-ray diffractometry revealed the presence of distinct Hf-O and Hf-Si-O phases in the HfSiOx film deposited with high-Hf content precursor. With an increase of Hf-content in the HfSiOx the equivalent oxide thickness value of the Pt-HfSiOx-Si gate stack was decreasing and leakage current maintained lower than that of HfO2 at the similar physical thickness.

UR - http://www.scopus.com/inward/record.url?scp=33846920892&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846920892&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2006.09.048

DO - 10.1016/j.tsf.2006.09.048

M3 - Article

AN - SCOPUS:33846920892

VL - 515

SP - 3802

EP - 3805

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 7-8

ER -