Studies of high-k dielectrics deposited by liquid source misted chemical deposition in MOS gate structures

Jerzy Ruzyllo, D. O. Lee, P. Roman, Mark William Horn, P. Mumbauer, M. Brubaker, R. Grant

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

This paper reviews results of an investigation of electrical characteristics and selected fundamental material properties of several high-k metal oxides considered for MOS gate applications. The metal oxide films were deposited using the LSMCD (Liquid Source Misted Chemical Deposition) method in a cluster tool. The method produces high quality films as thin as 3 nm and offers the flexibility of switching between various chemistries. Among compositions studied mist-deposited oxides of Hf and Zr as well as SrTa2O6 were found to display promising characteristics for MOS gate applications with the last showing superior thermal stability with silicon.

Original languageEnglish (US)
Pages (from-to)71-75
Number of pages5
JournalIEEE International Symposium on Semiconductor Manufacturing Conference, Proceedings
Volume2
DOIs
StatePublished - Jan 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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