Studies of mist deposited high-k dielectrics for MOS gates

D. O. Lee, P. Roman, C. T. Wu, W. Mahoney, M. Horn, P. Mumbauer, M. Brubaker, R. Grant, J. Ruzyllo

Research output: Contribution to journalConference article

6 Scopus citations

Abstract

This paper presents the results of the characterization of high-k dielectric films deposited by liquid source misted chemical deposition (LSMCD) in a cluster tool for advanced MOS gates. Electrical characterization (capacitance-voltage and current-voltage) was performed in conjunction with atomic force microscopy (AFM). The effects of in situ surface conditioning prior to deposition were also examined. Among processes investigated, the sequence depositing high-k dielectric, e.g. SrTa2O6, on nitrided oxide interlayer grown by a UV/NO process showed very good promise.

Original languageEnglish (US)
Pages (from-to)405-408
Number of pages4
JournalMicroelectronic Engineering
Volume59
Issue number1-4
DOIs
StatePublished - Nov 1 2001
Event12th Biannual Conference on Insulating Films on Semi-Conductors (INFOS 2001) - Udine, Italy
Duration: Jun 20 2001Jun 23 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Studies of mist deposited high-k dielectrics for MOS gates'. Together they form a unique fingerprint.

  • Cite this

    Lee, D. O., Roman, P., Wu, C. T., Mahoney, W., Horn, M., Mumbauer, P., Brubaker, M., Grant, R., & Ruzyllo, J. (2001). Studies of mist deposited high-k dielectrics for MOS gates. Microelectronic Engineering, 59(1-4), 405-408. https://doi.org/10.1016/S0167-9317(01)00676-1