With the growing diversification of semiconductor device applications there is a growing need for broader inclusion of metal oxides into mainstream semiconductor technology. The common feature for this class of materials is that their dielectric constant is higher than that of SiO2. Moreover, some of them display polarization effects making them of interest in memory devices. This paper reviews the formation of thin layers of metal oxides using liquid precursors. The solution processing method that offers performance and versatility superior to spin coating is the method of mist deposition. The focus of this work is on high-k dielectrics for MOS gates and ferroelectrics for memory devices formed using this technique. The effectiveness of mist deposition in these applications is considered. Adequate properties of metal oxides mist deposited on silicon and a feasibility of selective deposition of metal oxides using mist deposition are demonstrated.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering