Studies of solution processed metal oxides on silicon

K. Shanmugasundaram, M. Brubaker, K. Chang, P. Mumbauer, P. Roman, Jerzy Ruzyllo

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

With the growing diversification of semiconductor device applications there is a growing need for broader inclusion of metal oxides into mainstream semiconductor technology. The common feature for this class of materials is that their dielectric constant is higher than that of SiO2. Moreover, some of them display polarization effects making them of interest in memory devices. This paper reviews the formation of thin layers of metal oxides using liquid precursors. The solution processing method that offers performance and versatility superior to spin coating is the method of mist deposition. The focus of this work is on high-k dielectrics for MOS gates and ferroelectrics for memory devices formed using this technique. The effectiveness of mist deposition in these applications is considered. Adequate properties of metal oxides mist deposited on silicon and a feasibility of selective deposition of metal oxides using mist deposition are demonstrated.

Original languageEnglish (US)
Pages (from-to)2294-2297
Number of pages4
JournalMicroelectronic Engineering
Volume84
Issue number9-10
DOIs
StatePublished - Sep 1 2007

Fingerprint

mist
Fog
Silicon
Oxides
metal oxides
Metals
silicon
Data storage equipment
Spin coating
versatility
Semiconductor devices
semiconductor devices
Ferroelectric materials
coating
Permittivity
inclusions
Polarization
permittivity
Semiconductor materials
Liquids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Shanmugasundaram, K., Brubaker, M., Chang, K., Mumbauer, P., Roman, P., & Ruzyllo, J. (2007). Studies of solution processed metal oxides on silicon. Microelectronic Engineering, 84(9-10), 2294-2297. https://doi.org/10.1016/j.mee.2007.04.098
Shanmugasundaram, K. ; Brubaker, M. ; Chang, K. ; Mumbauer, P. ; Roman, P. ; Ruzyllo, Jerzy. / Studies of solution processed metal oxides on silicon. In: Microelectronic Engineering. 2007 ; Vol. 84, No. 9-10. pp. 2294-2297.
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Shanmugasundaram, K, Brubaker, M, Chang, K, Mumbauer, P, Roman, P & Ruzyllo, J 2007, 'Studies of solution processed metal oxides on silicon', Microelectronic Engineering, vol. 84, no. 9-10, pp. 2294-2297. https://doi.org/10.1016/j.mee.2007.04.098

Studies of solution processed metal oxides on silicon. / Shanmugasundaram, K.; Brubaker, M.; Chang, K.; Mumbauer, P.; Roman, P.; Ruzyllo, Jerzy.

In: Microelectronic Engineering, Vol. 84, No. 9-10, 01.09.2007, p. 2294-2297.

Research output: Contribution to journalArticle

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Shanmugasundaram K, Brubaker M, Chang K, Mumbauer P, Roman P, Ruzyllo J. Studies of solution processed metal oxides on silicon. Microelectronic Engineering. 2007 Sep 1;84(9-10):2294-2297. https://doi.org/10.1016/j.mee.2007.04.098