STUDIES OF SURFACE CONDUCTION MECHANISM IN SILICON COVERED BY ULTRA-THIN OXIDE LAYER.

Jerzy Ruzyllo, Andrzej Jakubowski, Alfred Swit

Research output: Contribution to journalArticle

Abstract

The mechanism of surface conduction in silicon covered by ultra-thin oxide layer was found to be of complex form different from the same mechanism in both, bare silicon and silicon covered by oxide layer thicker than 500 A. In the present work this mechanism is studied in detail, and the explanation of the observed effects is proposed.

Original languageEnglish (US)
Pages (from-to)593-600
Number of pages8
JournalBull Acad Pol Sci Ser Sci Tech
Volume26
Issue number6
StatePublished - Jan 1 1978

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conduction
Silicon
Oxides
oxides
silicon

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Ruzyllo, Jerzy ; Jakubowski, Andrzej ; Swit, Alfred. / STUDIES OF SURFACE CONDUCTION MECHANISM IN SILICON COVERED BY ULTRA-THIN OXIDE LAYER. In: Bull Acad Pol Sci Ser Sci Tech. 1978 ; Vol. 26, No. 6. pp. 593-600.
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STUDIES OF SURFACE CONDUCTION MECHANISM IN SILICON COVERED BY ULTRA-THIN OXIDE LAYER. / Ruzyllo, Jerzy; Jakubowski, Andrzej; Swit, Alfred.

In: Bull Acad Pol Sci Ser Sci Tech, Vol. 26, No. 6, 01.01.1978, p. 593-600.

Research output: Contribution to journalArticle

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AU - Jakubowski, Andrzej

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