The mechanism of surface conduction in silicon covered by ultra-thin oxide layer was found to be of complex form different from the same mechanism in both, bare silicon and silicon covered by oxide layer thicker than 500 A. In the present work this mechanism is studied in detail, and the explanation of the observed effects is proposed.
|Original language||English (US)|
|Number of pages||8|
|Journal||Bull Acad Pol Sci Ser Sci Tech|
|State||Published - Jan 1 1978|
All Science Journal Classification (ASJC) codes