Study of low-energy hydrogen implantation in silicon

K. Srikanth, S. Ashok

Research output: Contribution to journalArticle

Abstract

Permeation of atomic hydrogen in ion implant-damaged Si has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in p-type silicon wafers subjected to low-energy argon ion implantation. Similar results have been seen when B is substituted for Ar as the implant species, thus suggesting the universality of this damage-induced suppression of deactivation. Trapping of hydrogen in defect sites generated by argon implant and possibly, the formation of molecular hydrogen in the implanted region apparently hinder hydrogen permeation into the Si bulk.

Original languageEnglish (US)
Pages (from-to)1057-1060
Number of pages4
JournalVacuum
Volume39
Issue number11-12
DOIs
StatePublished - 1989

Fingerprint

Silicon
Ion implantation
Hydrogen
implantation
silicon
hydrogen
Argon
Permeation
deactivation
ion implantation
energy
argon
Boron
Amorphization
Silicon wafers
boron
trapping
Doping (additives)
retarding
wafers

All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

Cite this

Srikanth, K. ; Ashok, S. / Study of low-energy hydrogen implantation in silicon. In: Vacuum. 1989 ; Vol. 39, No. 11-12. pp. 1057-1060.
@article{030420d03eca4cb2b24b16a8c67a78ef,
title = "Study of low-energy hydrogen implantation in silicon",
abstract = "Permeation of atomic hydrogen in ion implant-damaged Si has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in p-type silicon wafers subjected to low-energy argon ion implantation. Similar results have been seen when B is substituted for Ar as the implant species, thus suggesting the universality of this damage-induced suppression of deactivation. Trapping of hydrogen in defect sites generated by argon implant and possibly, the formation of molecular hydrogen in the implanted region apparently hinder hydrogen permeation into the Si bulk.",
author = "K. Srikanth and S. Ashok",
year = "1989",
doi = "10.1016/0042-207X(89)91092-0",
language = "English (US)",
volume = "39",
pages = "1057--1060",
journal = "Vacuum",
issn = "0042-207X",
publisher = "Elsevier Limited",
number = "11-12",

}

Srikanth, K & Ashok, S 1989, 'Study of low-energy hydrogen implantation in silicon', Vacuum, vol. 39, no. 11-12, pp. 1057-1060. https://doi.org/10.1016/0042-207X(89)91092-0

Study of low-energy hydrogen implantation in silicon. / Srikanth, K.; Ashok, S.

In: Vacuum, Vol. 39, No. 11-12, 1989, p. 1057-1060.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of low-energy hydrogen implantation in silicon

AU - Srikanth, K.

AU - Ashok, S.

PY - 1989

Y1 - 1989

N2 - Permeation of atomic hydrogen in ion implant-damaged Si has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in p-type silicon wafers subjected to low-energy argon ion implantation. Similar results have been seen when B is substituted for Ar as the implant species, thus suggesting the universality of this damage-induced suppression of deactivation. Trapping of hydrogen in defect sites generated by argon implant and possibly, the formation of molecular hydrogen in the implanted region apparently hinder hydrogen permeation into the Si bulk.

AB - Permeation of atomic hydrogen in ion implant-damaged Si has been studied. Ar was implanted at two distinct doses so as to straggle the amorphization threshold, and atomic hydrogen was subsequently introduced by low-energy ion implantation. The deactivation of dopant boron atoms by atomic hydrogen is drastically reduced in p-type silicon wafers subjected to low-energy argon ion implantation. Similar results have been seen when B is substituted for Ar as the implant species, thus suggesting the universality of this damage-induced suppression of deactivation. Trapping of hydrogen in defect sites generated by argon implant and possibly, the formation of molecular hydrogen in the implanted region apparently hinder hydrogen permeation into the Si bulk.

UR - http://www.scopus.com/inward/record.url?scp=45249128438&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45249128438&partnerID=8YFLogxK

U2 - 10.1016/0042-207X(89)91092-0

DO - 10.1016/0042-207X(89)91092-0

M3 - Article

AN - SCOPUS:45249128438

VL - 39

SP - 1057

EP - 1060

JO - Vacuum

JF - Vacuum

SN - 0042-207X

IS - 11-12

ER -