Study of luminescence from GaN

Tb3+ Powders and thin films deposited by MOVPE and PLD methods

Jonathan H. Tao, Joseph Laski, Nestor Perea Lopez, Steven Shimizu, Joanna McKittrick, Jan B. Talbot, K. C. Mishra, David W. Hamby, Madis Raukas, Keith Klinedinst, Gustavo Hirata

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Due to the recent commercial interest in nitride-based optoelectronics and rare-earth emission in nitride materials, the structural and optical characteristics of GaN: Tb3+ powders and thin films have been investigated in this work. The powder samples were made using a three-step solution method. Pulsed laser deposition (PLD) and metallorganic vapor phase epitaxy (MOVPE) methods were utilized for depositing GaN: Tb3+ films on sapphire substrates. The GaN powders with activator concentrations up to 8 atom % exhibited Tb3+ luminescence due to the D 3,4 5 → Fj7 transitions under cathodoluminescence (CL) as well as under 243 nm photon excitation. Both near-band-edge emission and activator emission have been observed in PLD thin films made from the corresponding GaN: Tb3+ powders. X-ray diffraction revealed polycrystalline PLD thin films with a preferred growth direction along the c axis, while scanning electron micrographs showed rough film morphology with submicrometer particles. CL emission from Tb3+ accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris(2,2,6,6-tetramethyl-3,5- heptanedionato)terbium but not films made with tris(isopropylcyclopentadienyl) terbium. Despite visible luminescence from Tb3+ in GaN powders and thin films, no energy transfer from the host to activator ions was observed. This suggests that Tb3+ is unlikely to fluoresce if used in a GaN-based optoelectronic device.

Original languageEnglish (US)
JournalJournal of the Electrochemical Society
Volume156
Issue number6
DOIs
StatePublished - May 8 2009

Fingerprint

Metallorganic vapor phase epitaxy
Pulsed laser deposition
vapor phase epitaxy
Powders
pulsed laser deposition
Luminescence
luminescence
Thin films
Terbium
thin films
Cathodoluminescence
Nitrides
terbium
Optoelectronic devices
cathodoluminescence
nitrides
Aluminum Oxide
Sapphire
Energy transfer
Rare earths

All Science Journal Classification (ASJC) codes

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Tao, Jonathan H. ; Laski, Joseph ; Perea Lopez, Nestor ; Shimizu, Steven ; McKittrick, Joanna ; Talbot, Jan B. ; Mishra, K. C. ; Hamby, David W. ; Raukas, Madis ; Klinedinst, Keith ; Hirata, Gustavo. / Study of luminescence from GaN : Tb3+ Powders and thin films deposited by MOVPE and PLD methods. In: Journal of the Electrochemical Society. 2009 ; Vol. 156, No. 6.
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abstract = "Due to the recent commercial interest in nitride-based optoelectronics and rare-earth emission in nitride materials, the structural and optical characteristics of GaN: Tb3+ powders and thin films have been investigated in this work. The powder samples were made using a three-step solution method. Pulsed laser deposition (PLD) and metallorganic vapor phase epitaxy (MOVPE) methods were utilized for depositing GaN: Tb3+ films on sapphire substrates. The GaN powders with activator concentrations up to 8 atom {\%} exhibited Tb3+ luminescence due to the D 3,4 5 → Fj7 transitions under cathodoluminescence (CL) as well as under 243 nm photon excitation. Both near-band-edge emission and activator emission have been observed in PLD thin films made from the corresponding GaN: Tb3+ powders. X-ray diffraction revealed polycrystalline PLD thin films with a preferred growth direction along the c axis, while scanning electron micrographs showed rough film morphology with submicrometer particles. CL emission from Tb3+ accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris(2,2,6,6-tetramethyl-3,5- heptanedionato)terbium but not films made with tris(isopropylcyclopentadienyl) terbium. Despite visible luminescence from Tb3+ in GaN powders and thin films, no energy transfer from the host to activator ions was observed. This suggests that Tb3+ is unlikely to fluoresce if used in a GaN-based optoelectronic device.",
author = "Tao, {Jonathan H.} and Joseph Laski and {Perea Lopez}, Nestor and Steven Shimizu and Joanna McKittrick and Talbot, {Jan B.} and Mishra, {K. C.} and Hamby, {David W.} and Madis Raukas and Keith Klinedinst and Gustavo Hirata",
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Tao, JH, Laski, J, Perea Lopez, N, Shimizu, S, McKittrick, J, Talbot, JB, Mishra, KC, Hamby, DW, Raukas, M, Klinedinst, K & Hirata, G 2009, 'Study of luminescence from GaN: Tb3+ Powders and thin films deposited by MOVPE and PLD methods', Journal of the Electrochemical Society, vol. 156, no. 6. https://doi.org/10.1149/1.3116203

Study of luminescence from GaN : Tb3+ Powders and thin films deposited by MOVPE and PLD methods. / Tao, Jonathan H.; Laski, Joseph; Perea Lopez, Nestor; Shimizu, Steven; McKittrick, Joanna; Talbot, Jan B.; Mishra, K. C.; Hamby, David W.; Raukas, Madis; Klinedinst, Keith; Hirata, Gustavo.

In: Journal of the Electrochemical Society, Vol. 156, No. 6, 08.05.2009.

Research output: Contribution to journalArticle

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T1 - Study of luminescence from GaN

T2 - Tb3+ Powders and thin films deposited by MOVPE and PLD methods

AU - Tao, Jonathan H.

AU - Laski, Joseph

AU - Perea Lopez, Nestor

AU - Shimizu, Steven

AU - McKittrick, Joanna

AU - Talbot, Jan B.

AU - Mishra, K. C.

AU - Hamby, David W.

AU - Raukas, Madis

AU - Klinedinst, Keith

AU - Hirata, Gustavo

PY - 2009/5/8

Y1 - 2009/5/8

N2 - Due to the recent commercial interest in nitride-based optoelectronics and rare-earth emission in nitride materials, the structural and optical characteristics of GaN: Tb3+ powders and thin films have been investigated in this work. The powder samples were made using a three-step solution method. Pulsed laser deposition (PLD) and metallorganic vapor phase epitaxy (MOVPE) methods were utilized for depositing GaN: Tb3+ films on sapphire substrates. The GaN powders with activator concentrations up to 8 atom % exhibited Tb3+ luminescence due to the D 3,4 5 → Fj7 transitions under cathodoluminescence (CL) as well as under 243 nm photon excitation. Both near-band-edge emission and activator emission have been observed in PLD thin films made from the corresponding GaN: Tb3+ powders. X-ray diffraction revealed polycrystalline PLD thin films with a preferred growth direction along the c axis, while scanning electron micrographs showed rough film morphology with submicrometer particles. CL emission from Tb3+ accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris(2,2,6,6-tetramethyl-3,5- heptanedionato)terbium but not films made with tris(isopropylcyclopentadienyl) terbium. Despite visible luminescence from Tb3+ in GaN powders and thin films, no energy transfer from the host to activator ions was observed. This suggests that Tb3+ is unlikely to fluoresce if used in a GaN-based optoelectronic device.

AB - Due to the recent commercial interest in nitride-based optoelectronics and rare-earth emission in nitride materials, the structural and optical characteristics of GaN: Tb3+ powders and thin films have been investigated in this work. The powder samples were made using a three-step solution method. Pulsed laser deposition (PLD) and metallorganic vapor phase epitaxy (MOVPE) methods were utilized for depositing GaN: Tb3+ films on sapphire substrates. The GaN powders with activator concentrations up to 8 atom % exhibited Tb3+ luminescence due to the D 3,4 5 → Fj7 transitions under cathodoluminescence (CL) as well as under 243 nm photon excitation. Both near-band-edge emission and activator emission have been observed in PLD thin films made from the corresponding GaN: Tb3+ powders. X-ray diffraction revealed polycrystalline PLD thin films with a preferred growth direction along the c axis, while scanning electron micrographs showed rough film morphology with submicrometer particles. CL emission from Tb3+ accompanied by near-band-edge emission and defect emissions from the GaN host was observed for the MOVPE films made using tris(2,2,6,6-tetramethyl-3,5- heptanedionato)terbium but not films made with tris(isopropylcyclopentadienyl) terbium. Despite visible luminescence from Tb3+ in GaN powders and thin films, no energy transfer from the host to activator ions was observed. This suggests that Tb3+ is unlikely to fluoresce if used in a GaN-based optoelectronic device.

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