Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks

K. Chang, K. Shanmugasundaram, D. O. Lee, P. Roman, Jeffrey Shallenberger, F. M. Chang, J. Wang, P. Mumbauer, R. Grant, R. Beck, Jerzy Ruzyllo

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

In this experiment, different surface treatments applied before mist deposition of high-k gate dielectrics (HfSiO4) are investigated. Two different HfSiO4 precursors are considered: stoichiometric and Hf-rich. It was found that in-situ UV/NO-last and anhydrous HF/methanol-last treatments result in lower EOT than ex-situ dilute HF-last or nitrogen plasma immersion treatments, regardless of film composition. TEM analysis shows thinner interfacial layer between high-k dielectric and Si substrate in the case of in-situ surface treatments. Results obtained emphasize the need for pre-high-k deposition surface treatment to be carried out in-situ.

Original languageEnglish (US)
Pages78-85
Number of pages8
StatePublished - Dec 1 2003
EventCleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherCleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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    Chang, K., Shanmugasundaram, K., Lee, D. O., Roman, P., Shallenberger, J., Chang, F. M., Wang, J., Mumbauer, P., Grant, R., Beck, R., & Ruzyllo, J. (2003). Study of the effect of silicon surface treatment on equivalent oxide thickness in high-k dielectric mos gate stacks. 78-85. Paper presented at Cleaning Technology in Semiconductor Device Manufacturing VII - Proceedings of the International Symposium, Orlando, FL., United States.