Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

Joan Marie Redwing, T. F. Kuech, D. Saulys, D. F. Gaines

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Gas phase decomposition studies have been combined with metalorganic vapor phase epitaxy (MOVPE) growth and doping experiments to investigate the mechanism behind the Si doping of GaAs grown using tertiarybutylarsine (t-C4H9AsH2 or TBAs) as the Group V source. The use of TBAs leads to an increase in the Si doping efficiency from both SiH4 and Si2H6 sources and this enhancement was proposed to originate from the homogeneous generation of Si-bearing intermediates, (t-C4H9)SiH3 (TBSi) and SiH3AsH2, from reactions between SiH4 and the pyrolysis products of TBAs. We have investigated the formation and role of these intermediates in this Si doping chemistry. Results of our decomposition study show that TBSi pyrolyzes in the gas phase at relatively low temperatures to form SiH4. Consequently, the use of TBSias a Si dopant source results in a Si doping efficiency and temperature dependence that is identical to SiH4. TBSi is therefore not a likely route to increased Si incorporation. Our studies of the co-decomposition of TBAs and SiH4 or Si2H6 show that SiH3AsH2 is a co-pyrolysis product of TBAs and Si2H6, but not of TBAs and SiH4. Furthermore, there is no indication of gas phase interaction between TBAs and SiH4. The results of this study suggest that homogeneous reactions are not as important in this doping chemistry as had previously been considered and that surface processes may instead be responsible for the increase in Si doping observed with TBAs.

Original languageEnglish (US)
Pages (from-to)423-433
Number of pages11
JournalJournal of Crystal Growth
Volume135
Issue number3-4
DOIs
StatePublished - Jan 1 1994

Fingerprint

Metallorganic vapor phase epitaxy
Silicon
vapor phase epitaxy
Gases
Doping (additives)
chemistry
vapor phases
silicon
decomposition
pyrolysis
Decomposition
Pyrolysis
Bearings (structural)
products
gallium arsenide
indication
routes
temperature dependence
augmentation
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

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abstract = "Gas phase decomposition studies have been combined with metalorganic vapor phase epitaxy (MOVPE) growth and doping experiments to investigate the mechanism behind the Si doping of GaAs grown using tertiarybutylarsine (t-C4H9AsH2 or TBAs) as the Group V source. The use of TBAs leads to an increase in the Si doping efficiency from both SiH4 and Si2H6 sources and this enhancement was proposed to originate from the homogeneous generation of Si-bearing intermediates, (t-C4H9)SiH3 (TBSi) and SiH3AsH2, from reactions between SiH4 and the pyrolysis products of TBAs. We have investigated the formation and role of these intermediates in this Si doping chemistry. Results of our decomposition study show that TBSi pyrolyzes in the gas phase at relatively low temperatures to form SiH4. Consequently, the use of TBSias a Si dopant source results in a Si doping efficiency and temperature dependence that is identical to SiH4. TBSi is therefore not a likely route to increased Si incorporation. Our studies of the co-decomposition of TBAs and SiH4 or Si2H6 show that SiH3AsH2 is a co-pyrolysis product of TBAs and Si2H6, but not of TBAs and SiH4. Furthermore, there is no indication of gas phase interaction between TBAs and SiH4. The results of this study suggest that homogeneous reactions are not as important in this doping chemistry as had previously been considered and that surface processes may instead be responsible for the increase in Si doping observed with TBAs.",
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Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source. / Redwing, Joan Marie; Kuech, T. F.; Saulys, D.; Gaines, D. F.

In: Journal of Crystal Growth, Vol. 135, No. 3-4, 01.01.1994, p. 423-433.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Study of the gas phase chemistry in the silicon doping of GaAs grown by metalorganic vapor phase epitaxy using tertiarybutylarsine as the group V source

AU - Redwing, Joan Marie

AU - Kuech, T. F.

AU - Saulys, D.

AU - Gaines, D. F.

PY - 1994/1/1

Y1 - 1994/1/1

N2 - Gas phase decomposition studies have been combined with metalorganic vapor phase epitaxy (MOVPE) growth and doping experiments to investigate the mechanism behind the Si doping of GaAs grown using tertiarybutylarsine (t-C4H9AsH2 or TBAs) as the Group V source. The use of TBAs leads to an increase in the Si doping efficiency from both SiH4 and Si2H6 sources and this enhancement was proposed to originate from the homogeneous generation of Si-bearing intermediates, (t-C4H9)SiH3 (TBSi) and SiH3AsH2, from reactions between SiH4 and the pyrolysis products of TBAs. We have investigated the formation and role of these intermediates in this Si doping chemistry. Results of our decomposition study show that TBSi pyrolyzes in the gas phase at relatively low temperatures to form SiH4. Consequently, the use of TBSias a Si dopant source results in a Si doping efficiency and temperature dependence that is identical to SiH4. TBSi is therefore not a likely route to increased Si incorporation. Our studies of the co-decomposition of TBAs and SiH4 or Si2H6 show that SiH3AsH2 is a co-pyrolysis product of TBAs and Si2H6, but not of TBAs and SiH4. Furthermore, there is no indication of gas phase interaction between TBAs and SiH4. The results of this study suggest that homogeneous reactions are not as important in this doping chemistry as had previously been considered and that surface processes may instead be responsible for the increase in Si doping observed with TBAs.

AB - Gas phase decomposition studies have been combined with metalorganic vapor phase epitaxy (MOVPE) growth and doping experiments to investigate the mechanism behind the Si doping of GaAs grown using tertiarybutylarsine (t-C4H9AsH2 or TBAs) as the Group V source. The use of TBAs leads to an increase in the Si doping efficiency from both SiH4 and Si2H6 sources and this enhancement was proposed to originate from the homogeneous generation of Si-bearing intermediates, (t-C4H9)SiH3 (TBSi) and SiH3AsH2, from reactions between SiH4 and the pyrolysis products of TBAs. We have investigated the formation and role of these intermediates in this Si doping chemistry. Results of our decomposition study show that TBSi pyrolyzes in the gas phase at relatively low temperatures to form SiH4. Consequently, the use of TBSias a Si dopant source results in a Si doping efficiency and temperature dependence that is identical to SiH4. TBSi is therefore not a likely route to increased Si incorporation. Our studies of the co-decomposition of TBAs and SiH4 or Si2H6 show that SiH3AsH2 is a co-pyrolysis product of TBAs and Si2H6, but not of TBAs and SiH4. Furthermore, there is no indication of gas phase interaction between TBAs and SiH4. The results of this study suggest that homogeneous reactions are not as important in this doping chemistry as had previously been considered and that surface processes may instead be responsible for the increase in Si doping observed with TBAs.

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