Study of the growth mechanism and properties of InN films grown by MOCVD

Abhishek Jain, Joan M. Redwing

Research output: Contribution to journalConference article

Abstract

Thin films of InN were grown on (0001) Sapphire by MOCVD. The effect of growth conditions and buffer layer on the film morphology was studied. Growth temperature and TMI flow rate were important factors in the growth of InN. The use of a low temperature AlN buffer layer was also found to improve the morphology and crystal quality of the films. Thin (<40Å) AlN buffer layers produced the best results while polycrystalline InN was obtained when the buffer layer thickness exceeded 60Å. Delamination of the InN films was observed to occur at growth temperature, which limited the thickness of the films to less than 300 nm. A room temperature mobility of 792 cm2/Vs and an electron concentration of 2.1×l019 cm-3 were measured in an approximately 200 nm thick InN layer grown on sapphire.

Original languageEnglish (US)
Pages (from-to)225-230
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume798
DOIs
StatePublished - Jan 1 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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