Study of the josephson current of mgb2lnsulator/pb tunnel junctions

Ke Chen, Qi Li, Xiaoxing Xi

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Abstract

We have fabricated MgB2/Insulator/Pb Josephson tunnel junctions on MgB2 films deposited by hybrid physical-chemical vapor deposition using native oxide as the tunnel barrier. For the critical current of the junction on MgB2 (0001) film, its temperature dependence follows the Am- begaokar-Baratoff relation and its magnetic field dependence exhibits a Fraunhofer pattern. From analysing the magnetic field dependence of the critical current of the junction on c-axis tilted MgB2 film, we find small contribution of the Josephson current from the ab-plane tunneling, which may suggest a π phase difference between the order parameters of MgB and δ bands.

Original languageEnglish (US)
Article number5153090
Pages (from-to)261-264
Number of pages4
JournalIEEE Transactions on Applied Superconductivity
Volume19
Issue number3
DOIs
StatePublished - Jun 1 2009

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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