Abstract
We have fabricated MgB2/Insulator/Pb Josephson tunnel junctions on MgB2 films deposited by hybrid physical-chemical vapor deposition using native oxide as the tunnel barrier. For the critical current of the junction on MgB2 (0001) film, its temperature dependence follows the Am- begaokar-Baratoff relation and its magnetic field dependence exhibits a Fraunhofer pattern. From analysing the magnetic field dependence of the critical current of the junction on c-axis tilted MgB2 film, we find small contribution of the Josephson current from the ab-plane tunneling, which may suggest a π phase difference between the order parameters of MgB 2π and δ bands.
Original language | English (US) |
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Article number | 5153090 |
Pages (from-to) | 261-264 |
Number of pages | 4 |
Journal | IEEE Transactions on Applied Superconductivity |
Volume | 19 |
Issue number | 3 |
DOIs | |
State | Published - Jun 2009 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering