Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes

Chen Chen, Wei Zhang, Zhao Xing, Yun Sun, Rui Jia, Zhi Jin, Xinyu Liu, Joan Marie Redwing

Research output: Contribution to journalArticle

Abstract

In case of the n-type rear-emitter solar cell (n-RESC), wafer thickness scaling down has been studied and simulated under different bulk lifetimes (τbulk). The effect of minority-carrier lifetime of bulk τbulk on photovoltaic properties has been studied by using a symmetrical front-and-rear electrode structure, followed by a discussion of the physical mechanism. Simulation results show that by decreasing the wafer thickness, high energy-conversion efficiency can be achieved, even though a low bulk lifetime substrate is used, suggesting a cost-effective way to manufacture the high efficiency n-RESC. In addition, emitter saturation current density (Joe) of the n-RESC has also been extracted.

Original languageEnglish (US)
Article number053105
JournalJournal of Applied Physics
Volume116
Issue number5
DOIs
StatePublished - Aug 7 2014

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emitters
solar cells
wafers
scaling
life (durability)
energy conversion efficiency
carrier lifetime
minority carriers
current density
costs
saturation
electrodes
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Chen, Chen ; Zhang, Wei ; Xing, Zhao ; Sun, Yun ; Jia, Rui ; Jin, Zhi ; Liu, Xinyu ; Redwing, Joan Marie. / Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes. In: Journal of Applied Physics. 2014 ; Vol. 116, No. 5.
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Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes. / Chen, Chen; Zhang, Wei; Xing, Zhao; Sun, Yun; Jia, Rui; Jin, Zhi; Liu, Xinyu; Redwing, Joan Marie.

In: Journal of Applied Physics, Vol. 116, No. 5, 053105, 07.08.2014.

Research output: Contribution to journalArticle

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AU - Redwing, Joan Marie

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