Study of wafer thickness scaling in n-type rear-emitter solar cells with different bulk lifetimes

Chen Chen, Wei Zhang, Zhao Xing, Yun Sun, Rui Jia, Zhi Jin, Xinyu Liu, Joan Marie Redwing

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Abstract

In case of the n-type rear-emitter solar cell (n-RESC), wafer thickness scaling down has been studied and simulated under different bulk lifetimes (τbulk). The effect of minority-carrier lifetime of bulk τbulk on photovoltaic properties has been studied by using a symmetrical front-and-rear electrode structure, followed by a discussion of the physical mechanism. Simulation results show that by decreasing the wafer thickness, high energy-conversion efficiency can be achieved, even though a low bulk lifetime substrate is used, suggesting a cost-effective way to manufacture the high efficiency n-RESC. In addition, emitter saturation current density (Joe) of the n-RESC has also been extracted.

Original languageEnglish (US)
Article number053105
JournalJournal of Applied Physics
Volume116
Issue number5
DOIs
StatePublished - Aug 7 2014

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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