Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs

S. Dasgupta, A. Rajashekhar, K. Majumdar, N. Agrawal, A. Razavieh, Susan E. Trolier-McKinstry, S. Datta

Research output: Contribution to journalArticle

68 Citations (Scopus)

Abstract

Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

Original languageEnglish (US)
Article number7130555
Pages (from-to)43-48
Number of pages6
JournalIEEE Journal on Exploratory Solid-State Computational Devices and Circuits
Volume1
DOIs
StatePublished - Dec 1 2015

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Field effect transistors
Capacitance
Ferroelectric materials
Silicon
Buffers
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

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title = "Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs",
abstract = "Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.",
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Sub-kT/q Switching in Strong Inversion in PbZr0.52Ti0.48O3 Gated Negative Capacitance FETs. / Dasgupta, S.; Rajashekhar, A.; Majumdar, K.; Agrawal, N.; Razavieh, A.; Trolier-McKinstry, Susan E.; Datta, S.

In: IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol. 1, 7130555, 01.12.2015, p. 43-48.

Research output: Contribution to journalArticle

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AU - Dasgupta, S.

AU - Rajashekhar, A.

AU - Majumdar, K.

AU - Agrawal, N.

AU - Razavieh, A.

AU - Trolier-McKinstry, Susan E.

AU - Datta, S.

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AB - Hysteretic switching with a sub-kT/q steep slope (13 mV/decade at room temperature) is experimentally demonstrated in MOSFETs with PbZr0.52 Ti0.48O3 as a ferroelectric (FE) gate insulator, integrated on a silicon channel with a nonperovskite high-k dielectric (HfO2) as a buffer interlayer. The steep switching is independent of drain bias. For the first time, sub-kT/q switching due to FE negative capacitance is observed not at low currents, but in strong inversion (Id ∼ 100 μA/μm). Steep switching in strong inversion provides an important point of consistency with the predictions of the Landau-Devonshire theory and the Landau-Khalatnikov equation.

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