Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride

Nasim Alem, Quentin M. Ramasse, Che R. Seabourne, Oleg V. Yazyev, Kris Erickson, Michael C. Sarahan, Christian Kisielowski, Andrew J. Scott, Steven G. Louie, A. Zettl

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexplored for h-BN, however, is the possibility that small additional edge-atom distortions could have electronic structure implications critically important to nanoengineering efforts. Here we demonstrate, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Orbital maps calculated in 3D around the closed edge reveal that the out-of-plane bonds retain a strong π* character. We show that this closed edge reconstruction, strikingly different from the equivalent case for graphene, helps the material recover its bulklike insulating behavior and thus largely negates the predicted metallic character of open edges.

Original languageEnglish (US)
Article number205502
JournalPhysical Review Letters
Volume109
Issue number20
DOIs
StatePublished - Nov 16 2012

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boron nitrides
electron microscopy
atomic structure
interlayers
graphene
physical properties
density functional theory
electronic structure
membranes
orbitals
transmission electron microscopy
scanning electron microscopy
crystal structure
atoms

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Alem, N., Ramasse, Q. M., Seabourne, C. R., Yazyev, O. V., Erickson, K., Sarahan, M. C., ... Zettl, A. (2012). Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride. Physical Review Letters, 109(20), [205502]. https://doi.org/10.1103/PhysRevLett.109.205502
Alem, Nasim ; Ramasse, Quentin M. ; Seabourne, Che R. ; Yazyev, Oleg V. ; Erickson, Kris ; Sarahan, Michael C. ; Kisielowski, Christian ; Scott, Andrew J. ; Louie, Steven G. ; Zettl, A. / Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride. In: Physical Review Letters. 2012 ; Vol. 109, No. 20.
@article{e97859ad85ff427cacc2bb137a05061b,
title = "Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride",
abstract = "Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexplored for h-BN, however, is the possibility that small additional edge-atom distortions could have electronic structure implications critically important to nanoengineering efforts. Here we demonstrate, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Orbital maps calculated in 3D around the closed edge reveal that the out-of-plane bonds retain a strong π* character. We show that this closed edge reconstruction, strikingly different from the equivalent case for graphene, helps the material recover its bulklike insulating behavior and thus largely negates the predicted metallic character of open edges.",
author = "Nasim Alem and Ramasse, {Quentin M.} and Seabourne, {Che R.} and Yazyev, {Oleg V.} and Kris Erickson and Sarahan, {Michael C.} and Christian Kisielowski and Scott, {Andrew J.} and Louie, {Steven G.} and A. Zettl",
year = "2012",
month = "11",
day = "16",
doi = "10.1103/PhysRevLett.109.205502",
language = "English (US)",
volume = "109",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "20",

}

Alem, N, Ramasse, QM, Seabourne, CR, Yazyev, OV, Erickson, K, Sarahan, MC, Kisielowski, C, Scott, AJ, Louie, SG & Zettl, A 2012, 'Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride', Physical Review Letters, vol. 109, no. 20, 205502. https://doi.org/10.1103/PhysRevLett.109.205502

Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride. / Alem, Nasim; Ramasse, Quentin M.; Seabourne, Che R.; Yazyev, Oleg V.; Erickson, Kris; Sarahan, Michael C.; Kisielowski, Christian; Scott, Andrew J.; Louie, Steven G.; Zettl, A.

In: Physical Review Letters, Vol. 109, No. 20, 205502, 16.11.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Subangstrom edge relaxations probed by electron microscopy in hexagonal boron nitride

AU - Alem, Nasim

AU - Ramasse, Quentin M.

AU - Seabourne, Che R.

AU - Yazyev, Oleg V.

AU - Erickson, Kris

AU - Sarahan, Michael C.

AU - Kisielowski, Christian

AU - Scott, Andrew J.

AU - Louie, Steven G.

AU - Zettl, A.

PY - 2012/11/16

Y1 - 2012/11/16

N2 - Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexplored for h-BN, however, is the possibility that small additional edge-atom distortions could have electronic structure implications critically important to nanoengineering efforts. Here we demonstrate, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Orbital maps calculated in 3D around the closed edge reveal that the out-of-plane bonds retain a strong π* character. We show that this closed edge reconstruction, strikingly different from the equivalent case for graphene, helps the material recover its bulklike insulating behavior and thus largely negates the predicted metallic character of open edges.

AB - Theoretical research on the two-dimensional crystal structure of hexagonal boron nitride (h-BN) has suggested that the physical properties of h-BN can be tailored for a wealth of applications by controlling the atomic structure of the membrane edges. Unexplored for h-BN, however, is the possibility that small additional edge-atom distortions could have electronic structure implications critically important to nanoengineering efforts. Here we demonstrate, using a combination of analytical scanning transmission electron microscopy and density functional theory, that covalent interlayer bonds form spontaneously at the edges of a h-BN bilayer, resulting in subangstrom distortions of the edge atomic structure. Orbital maps calculated in 3D around the closed edge reveal that the out-of-plane bonds retain a strong π* character. We show that this closed edge reconstruction, strikingly different from the equivalent case for graphene, helps the material recover its bulklike insulating behavior and thus largely negates the predicted metallic character of open edges.

UR - http://www.scopus.com/inward/record.url?scp=84870210597&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870210597&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.109.205502

DO - 10.1103/PhysRevLett.109.205502

M3 - Article

AN - SCOPUS:84870210597

VL - 109

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 20

M1 - 205502

ER -