Submicron-gate-length GaAs MESFETs

Thomas Nelson Jackson, B. J. Van Zeghbroeck, G. Pepper, J. F. DeGelormo, T. Keuch, H. Meier, P. Wolf

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

It is well known that reducing gate length is a powerful means to increase the transconductance and transit frequency of GaAs MESFET devices. However, by reducing the gate length without scaling channel doping and thickness, the performance obtained is limited by short-channel effects and parasitics. In this paper we present an overview of our work on two different MESFET structures, illustrating how device performance can be increased by decreasing the gate length, with the result that appropriately scaled MESFETs compare favorably with GaAs-AlGaAs heterojunction FETs. From our work - including some recent results on 0.15-μm-gate-length implantation-self-aligned MESFETs - we conclude that it should be possible to increase the speed of high-speed GaAs MESFET (logic, analog, and microwave) circuits through the use of devices having gate lengths less than 0.5 μm.

Original languageEnglish (US)
Pages (from-to)495-505
Number of pages11
JournalIBM Journal of Research and Development
Volume34
Issue number4
DOIs
StatePublished - Jan 1 1990

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MESFET devices
Microwave circuits
Logic circuits
Analog circuits
Transconductance
Field effect transistors
Heterojunctions
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Computer Science(all)

Cite this

Jackson, T. N., Van Zeghbroeck, B. J., Pepper, G., DeGelormo, J. F., Keuch, T., Meier, H., & Wolf, P. (1990). Submicron-gate-length GaAs MESFETs. IBM Journal of Research and Development, 34(4), 495-505. https://doi.org/10.1147/rd.344.0495
Jackson, Thomas Nelson ; Van Zeghbroeck, B. J. ; Pepper, G. ; DeGelormo, J. F. ; Keuch, T. ; Meier, H. ; Wolf, P. / Submicron-gate-length GaAs MESFETs. In: IBM Journal of Research and Development. 1990 ; Vol. 34, No. 4. pp. 495-505.
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Jackson, TN, Van Zeghbroeck, BJ, Pepper, G, DeGelormo, JF, Keuch, T, Meier, H & Wolf, P 1990, 'Submicron-gate-length GaAs MESFETs', IBM Journal of Research and Development, vol. 34, no. 4, pp. 495-505. https://doi.org/10.1147/rd.344.0495

Submicron-gate-length GaAs MESFETs. / Jackson, Thomas Nelson; Van Zeghbroeck, B. J.; Pepper, G.; DeGelormo, J. F.; Keuch, T.; Meier, H.; Wolf, P.

In: IBM Journal of Research and Development, Vol. 34, No. 4, 01.01.1990, p. 495-505.

Research output: Contribution to journalArticle

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AU - Meier, H.

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Jackson TN, Van Zeghbroeck BJ, Pepper G, DeGelormo JF, Keuch T, Meier H et al. Submicron-gate-length GaAs MESFETs. IBM Journal of Research and Development. 1990 Jan 1;34(4):495-505. https://doi.org/10.1147/rd.344.0495