The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.
|Original language||English (US)|
|Number of pages||6|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - Jan 1 1996|
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics