Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

J. Burnham, D. Sanders, C. Xu, R. Braun, S. Goss, K. Caffey, Barbara Jane Garrison, Nicholas Winograd

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

Original languageEnglish (US)
Pages (from-to)9901-9906
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume53
Issue number15
DOIs
StatePublished - Jan 1 1996

Fingerprint

Dimers
Ions
Angular distribution
Secondary ion mass spectrometry
Ion bombardment
dimers
Molecular beam epitaxy
ions
troughs
Atoms
secondary ion mass spectrometry
bombardment
Computer simulation
molecular beam epitaxy
angular distribution
computerized simulation
spacing
room temperature
Temperature
atoms

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Burnham, J. ; Sanders, D. ; Xu, C. ; Braun, R. ; Goss, S. ; Caffey, K. ; Garrison, Barbara Jane ; Winograd, Nicholas. / Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface. In: Physical Review B - Condensed Matter and Materials Physics. 1996 ; Vol. 53, No. 15. pp. 9901-9906.
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abstract = "The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 {\AA} above the surface plane. These dimers maintain their 2.73-{\AA} spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.",
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Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface. / Burnham, J.; Sanders, D.; Xu, C.; Braun, R.; Goss, S.; Caffey, K.; Garrison, Barbara Jane; Winograd, Nicholas.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 53, No. 15, 01.01.1996, p. 9901-9906.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

AU - Burnham, J.

AU - Sanders, D.

AU - Xu, C.

AU - Braun, R.

AU - Goss, S.

AU - Caffey, K.

AU - Garrison, Barbara Jane

AU - Winograd, Nicholas

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AB - The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

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