Submonolayer structure of an abrupt Al/GaAs(001)\-(2×4) interface

J. Burnham, D. Sanders, C. Xu, R. Braun, S. Goss, K. Caffey, B. Garrison, N. Winograd

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5 Scopus citations


The structure of As-terminated Al/GaAs(001)\-(2×4) has been determined in atomic detail using angle-resolved secondary-ion-mass spectrometry. We find an abrupt interface is formed at room temperature by deposition of 0.3 ML of Al onto GaAs(001)\-(2×4) prepared in situ by molecular-beam epitaxy. The Al atoms are found to adsorb in the troughs between two (Formula presented) dimers, in ordered sites 0.79±0.10 Å above the surface plane. These dimers maintain their 2.73-Å spacing after Al deposition. The structure is determined from angular distributions of (Formula presented) and (Formula presented) ions desorbed by keV ions and computer simulations of the ion-bombardment event.

Original languageEnglish (US)
Pages (from-to)9901-9906
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number15
StatePublished - 1996

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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