To investigate the effects of substrate material on the performance of GaN photoconductive detectors, similar photodetectors were grown by MOVPE on sapphire, SiC and thick hydride vapor phase epitaxy grown GaN-on-sapphire (GOS) substrates. The grown layers were examined by X-ray diffraction, transmission electron microscopy and atomic microscopy. Based on X-ray diffraction width, dislocation density and surface roughness of the materials grown on each substrate, GOS and SiC exhibited superior performance over sapphire. Improved material quality provided a corresponding improvement in optical response and sharpness of the detectors.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)