Substrate effects on GaN photoconductive detector performance

G. M. Smith, Joan Marie Redwing, R. P. Vaudo, E. M. Ross, J. S. Flynn, V. M. Phanse

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Abstract

To investigate the effects of substrate material on the performance of GaN photoconductive detectors, similar photodetectors were grown by MOVPE on sapphire, SiC and thick hydride vapor phase epitaxy grown GaN-on-sapphire (GOS) substrates. The grown layers were examined by X-ray diffraction, transmission electron microscopy and atomic microscopy. Based on X-ray diffraction width, dislocation density and surface roughness of the materials grown on each substrate, GOS and SiC exhibited superior performance over sapphire. Improved material quality provided a corresponding improvement in optical response and sharpness of the detectors.

Original languageEnglish (US)
Pages (from-to)25-27
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number1
DOIs
StatePublished - Jul 5 1999

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Smith, G. M., Redwing, J. M., Vaudo, R. P., Ross, E. M., Flynn, J. S., & Phanse, V. M. (1999). Substrate effects on GaN photoconductive detector performance. Applied Physics Letters, 75(1), 25-27. https://doi.org/10.1063/1.124265