Substrate effects on GaN photodetector performance

Gary M. Smith, Joan M. Redwing, Jeff S. Flynn, Vivek M. Phanse, Robert P. Vaudo

Research output: Contribution to journalConference article

Abstract

Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

Original languageEnglish (US)
Number of pages1
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

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All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Smith, G. M., Redwing, J. M., Flynn, J. S., Phanse, V. M., & Vaudo, R. P. (1997). Substrate effects on GaN photodetector performance. LEOS Summer Topical Meeting.