Substrate effects on GaN photodetector performance

Gary M. Smith, Joan Marie Redwing, Jeff S. Flynn, Vivek M. Phanse, Robert P. Vaudo

Research output: Contribution to journalArticle

Abstract

Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

Original languageEnglish (US)
Pages (from-to)21
Number of pages1
JournalLEOS Summer Topical Meeting
StatePublished - 1997

Fingerprint

Photodetectors
photometers
Detectors
detectors
Substrates
Sapphire
sapphire
dynamic range
cut-off
Wavelength
wavelengths

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Smith, G. M., Redwing, J. M., Flynn, J. S., Phanse, V. M., & Vaudo, R. P. (1997). Substrate effects on GaN photodetector performance. LEOS Summer Topical Meeting, 21.
Smith, Gary M. ; Redwing, Joan Marie ; Flynn, Jeff S. ; Phanse, Vivek M. ; Vaudo, Robert P. / Substrate effects on GaN photodetector performance. In: LEOS Summer Topical Meeting. 1997 ; pp. 21.
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Smith, GM, Redwing, JM, Flynn, JS, Phanse, VM & Vaudo, RP 1997, 'Substrate effects on GaN photodetector performance', LEOS Summer Topical Meeting, pp. 21.

Substrate effects on GaN photodetector performance. / Smith, Gary M.; Redwing, Joan Marie; Flynn, Jeff S.; Phanse, Vivek M.; Vaudo, Robert P.

In: LEOS Summer Topical Meeting, 1997, p. 21.

Research output: Contribution to journalArticle

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