Substrate effects on GaN photodetector performance

Gary M. Smith, Joan M. Redwing, Jeff S. Flynn, Vivek M. Phanse, Robert P. Vaudo

Research output: Contribution to journalConference article

Abstract

Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

Original languageEnglish (US)
Number of pages1
JournalLEOS Summer Topical Meeting
StatePublished - Jan 1 1997
EventProceedings of the 1997 LEOS Summer Topical Meeting - Montreal, Can
Duration: Aug 11 1997Aug 15 1997

Fingerprint

Photodetectors
photometers
Detectors
detectors
Substrates
Sapphire
sapphire
dynamic range
cut-off
Wavelength
wavelengths

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Smith, G. M., Redwing, J. M., Flynn, J. S., Phanse, V. M., & Vaudo, R. P. (1997). Substrate effects on GaN photodetector performance. LEOS Summer Topical Meeting.
Smith, Gary M. ; Redwing, Joan M. ; Flynn, Jeff S. ; Phanse, Vivek M. ; Vaudo, Robert P. / Substrate effects on GaN photodetector performance. In: LEOS Summer Topical Meeting. 1997.
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Substrate effects on GaN photodetector performance. / Smith, Gary M.; Redwing, Joan M.; Flynn, Jeff S.; Phanse, Vivek M.; Vaudo, Robert P.

In: LEOS Summer Topical Meeting, 01.01.1997.

Research output: Contribution to journalConference article

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AU - Smith, Gary M.

AU - Redwing, Joan M.

AU - Flynn, Jeff S.

AU - Phanse, Vivek M.

AU - Vaudo, Robert P.

PY - 1997/1/1

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N2 - Photoconductive detectors are fabricated on two different substrates: SiC substrates with a closer lattice match to GaN and thick GaN layers grown on sapphire with dislocation densities in the range of 1E8-1E9/cm2. The detectors on SiC exhibit a slightly higher responsivity and sharper wavelength cutoff than the detectors on sapphire. The dynamic range of the detectors indicate that the detectors on SiC substrates have a more linear response to intensity variations than the detectors on sapphire which have a square root dependence on the intensity.

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